Influence of traps on magnetophotoconductivity in p-HgCdTe
The photoconductivity in magnetic field (magnetophotoconductivity) in p-HgCdTe was studied. Magnetic field and light were perpendicular to samples surface. The authors have found that the magnetophotoconductivity at temperature range 77-125 K has a small constant component independent of magnetic fi...
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creator | Protasov, D.D. Kostuchenko, V.Ya Ovsyuk, V.N. |
description | The photoconductivity in magnetic field (magnetophotoconductivity) in p-HgCdTe was studied. Magnetic field and light were perpendicular to samples surface. The authors have found that the magnetophotoconductivity at temperature range 77-125 K has a small constant component independent of magnetic field. The origin of this phenomenon may be explained by influence of traps on magnetophotoconductivity. |
doi_str_mv | 10.1109/SIBEDM.2005.195580 |
format | Conference Proceeding |
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Magnetic field and light were perpendicular to samples surface. The authors have found that the magnetophotoconductivity at temperature range 77-125 K has a small constant component independent of magnetic field. The origin of this phenomenon may be explained by influence of traps on magnetophotoconductivity.</description><identifier>ISSN: 1815-3712</identifier><identifier>ISBN: 5778204914</identifier><identifier>ISBN: 9785778204911</identifier><identifier>DOI: 10.1109/SIBEDM.2005.195580</identifier><language>eng</language><publisher>IEEE</publisher><subject>Charge carrier processes ; Electron mobility ; Electron traps ; Magnetic fields ; Magnetic materials ; Magnetic semiconductors ; Magnetosphere ; Photoconductivity ; Photonic crystals ; Saturation magnetization</subject><ispartof>Proceedings. 6th Annual. 2005 International Siberian Workshop and Tutorials on Electron Devices and Materials, 2005, 2005, p.47-48</ispartof><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/1523185$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>309,310,776,780,785,786,2052,4036,4037,27902,54895</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/1523185$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc></links><search><creatorcontrib>Protasov, D.D.</creatorcontrib><creatorcontrib>Kostuchenko, V.Ya</creatorcontrib><creatorcontrib>Ovsyuk, V.N.</creatorcontrib><title>Influence of traps on magnetophotoconductivity in p-HgCdTe</title><title>Proceedings. 6th Annual. 2005 International Siberian Workshop and Tutorials on Electron Devices and Materials, 2005</title><addtitle>SIBEDM</addtitle><description>The photoconductivity in magnetic field (magnetophotoconductivity) in p-HgCdTe was studied. Magnetic field and light were perpendicular to samples surface. The authors have found that the magnetophotoconductivity at temperature range 77-125 K has a small constant component independent of magnetic field. The origin of this phenomenon may be explained by influence of traps on magnetophotoconductivity.</description><subject>Charge carrier processes</subject><subject>Electron mobility</subject><subject>Electron traps</subject><subject>Magnetic fields</subject><subject>Magnetic materials</subject><subject>Magnetic semiconductors</subject><subject>Magnetosphere</subject><subject>Photoconductivity</subject><subject>Photonic crystals</subject><subject>Saturation magnetization</subject><issn>1815-3712</issn><isbn>5778204914</isbn><isbn>9785778204911</isbn><fulltext>true</fulltext><rsrctype>conference_proceeding</rsrctype><creationdate>2005</creationdate><recordtype>conference_proceeding</recordtype><sourceid>6IE</sourceid><sourceid>RIE</sourceid><recordid>eNotjstOwzAQRS0BEqX0B2DjH0jw-FF72EEoNFIRC8q6cp1xCWqTKHGR-veNBHdzzuroMnYHIgcQ-PBZPi9e3nMphMkBjXHigt0Ya50UGkFfsgk4MJmyIK_ZbBh-xDiFWiFM2GPZxP2RmkC8jTz1vht42_CD3zWU2u67TW1om-oYUv1bpxOvG95ly11RremWXUW_H2j2zyn7el2si2W2-ngri6dVVoM1KYteG4mOxBZxvCgC2oCeDFIFKDFYUBFQkZnrubVqizpUTpIaHTCCVlN2_9etiWjT9fXB96cNGKnAGXUGE_ZGsQ</recordid><startdate>2005</startdate><enddate>2005</enddate><creator>Protasov, D.D.</creator><creator>Kostuchenko, V.Ya</creator><creator>Ovsyuk, V.N.</creator><general>IEEE</general><scope>6IE</scope><scope>6IL</scope><scope>CBEJK</scope><scope>RIE</scope><scope>RIL</scope></search><sort><creationdate>2005</creationdate><title>Influence of traps on magnetophotoconductivity in p-HgCdTe</title><author>Protasov, D.D. ; Kostuchenko, V.Ya ; Ovsyuk, V.N.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-i175t-fa45298e0b990050c97c9ae59ed1929c713f193e5646773b94cd82e377319f143</frbrgroupid><rsrctype>conference_proceedings</rsrctype><prefilter>conference_proceedings</prefilter><language>eng</language><creationdate>2005</creationdate><topic>Charge carrier processes</topic><topic>Electron mobility</topic><topic>Electron traps</topic><topic>Magnetic fields</topic><topic>Magnetic materials</topic><topic>Magnetic semiconductors</topic><topic>Magnetosphere</topic><topic>Photoconductivity</topic><topic>Photonic crystals</topic><topic>Saturation magnetization</topic><toplevel>online_resources</toplevel><creatorcontrib>Protasov, D.D.</creatorcontrib><creatorcontrib>Kostuchenko, V.Ya</creatorcontrib><creatorcontrib>Ovsyuk, V.N.</creatorcontrib><collection>IEEE Electronic Library (IEL) Conference Proceedings</collection><collection>IEEE Proceedings Order Plan All Online (POP All Online) 1998-present by volume</collection><collection>IEEE Xplore All Conference Proceedings</collection><collection>IEEE Electronic Library (IEL)</collection><collection>IEEE Proceedings Order Plans (POP All) 1998-Present</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Protasov, D.D.</au><au>Kostuchenko, V.Ya</au><au>Ovsyuk, V.N.</au><format>book</format><genre>proceeding</genre><ristype>CONF</ristype><atitle>Influence of traps on magnetophotoconductivity in p-HgCdTe</atitle><btitle>Proceedings. 6th Annual. 2005 International Siberian Workshop and Tutorials on Electron Devices and Materials, 2005</btitle><stitle>SIBEDM</stitle><date>2005</date><risdate>2005</risdate><spage>47</spage><epage>48</epage><pages>47-48</pages><issn>1815-3712</issn><isbn>5778204914</isbn><isbn>9785778204911</isbn><abstract>The photoconductivity in magnetic field (magnetophotoconductivity) in p-HgCdTe was studied. Magnetic field and light were perpendicular to samples surface. The authors have found that the magnetophotoconductivity at temperature range 77-125 K has a small constant component independent of magnetic field. The origin of this phenomenon may be explained by influence of traps on magnetophotoconductivity.</abstract><pub>IEEE</pub><doi>10.1109/SIBEDM.2005.195580</doi><tpages>2</tpages></addata></record> |
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ispartof | Proceedings. 6th Annual. 2005 International Siberian Workshop and Tutorials on Electron Devices and Materials, 2005, 2005, p.47-48 |
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source | IEEE Electronic Library (IEL) Conference Proceedings |
subjects | Charge carrier processes Electron mobility Electron traps Magnetic fields Magnetic materials Magnetic semiconductors Magnetosphere Photoconductivity Photonic crystals Saturation magnetization |
title | Influence of traps on magnetophotoconductivity in p-HgCdTe |
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