75 GHz InP HBT distributed amplifier with record figures of merit and low power dissipation for OEIC applications
We present an InP HBT distributed amplifier with a bandwidth of 75 GHz, gain of 14 dB, and power consumption of 78 mW. The HBTs had a 600 nm thick collector, and hence relatively low f T and f MAX of 84 GHz and 150 GHz respectively. The thick collector is a tradeoff required in optoelectronic integr...
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| creator | Cohen, E. Betser, Y. Sheinman, B. Cohen, S. Sidorov, V. Gavrilov, A. Ritter, D. |
| description | We present an InP HBT distributed amplifier with a bandwidth of 75 GHz, gain of 14 dB, and power consumption of 78 mW. The HBTs had a 600 nm thick collector, and hence relatively low f T and f MAX of 84 GHz and 150 GHz respectively. The thick collector is a tradeoff required in optoelectronic integrated receivers, in which the PIN diode layers are the same as the base collector layers. To obtain high PEN diode responsivity, the collector layer needs to be thicker than in optimized HBTs. The amplifier topology comprises an emitter follower at the input and a cascode stage, with a resistor and inductance at the emitter follower output, and a peaking line between the HBTs in the cascode stage. The amplifier exhibits matching at the input better than -10 dB up to 85 GHz. The chip contains 16 HBTs and it size is 1.7mm times 0.9 mm |
| doi_str_mv | 10.1109/ICIPRM.2005.1517570 |
| format | Conference Proceeding |
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The HBTs had a 600 nm thick collector, and hence relatively low f T and f MAX of 84 GHz and 150 GHz respectively. The thick collector is a tradeoff required in optoelectronic integrated receivers, in which the PIN diode layers are the same as the base collector layers. To obtain high PEN diode responsivity, the collector layer needs to be thicker than in optimized HBTs. The amplifier topology comprises an emitter follower at the input and a cascode stage, with a resistor and inductance at the emitter follower output, and a peaking line between the HBTs in the cascode stage. The amplifier exhibits matching at the input better than -10 dB up to 85 GHz. 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The chip contains 16 HBTs and it size is 1.7mm times 0.9 mm</description><subject>Bandwidth</subject><subject>Diodes</subject><subject>Distributed amplifiers</subject><subject>Energy consumption</subject><subject>Gain</subject><subject>Heterojunction bipolar transistors</subject><subject>Indium phosphide</subject><subject>Optoelectronic devices</subject><subject>Power dissipation</subject><subject>Topology</subject><issn>1092-8669</issn><isbn>9780780388918</isbn><isbn>0780388917</isbn><fulltext>true</fulltext><rsrctype>conference_proceeding</rsrctype><creationdate>2005</creationdate><recordtype>conference_proceeding</recordtype><sourceid>6IE</sourceid><sourceid>RIE</sourceid><recordid>eNotkN9KwzAchQMqOOeeYDe_F-hMmqRJLrXMrTDZkN2PNH800rU16Rj69Cs6OHDg8PFdHITmBC8IweqpKqvd-9six5gvCCeCC3yDZkpIPIZKqYi8RZORzDNZFOoePaT0hUda5HKCvgWH1foXqnYH65c92JCGGOrT4CzoY98EH1yEcxg-ITrTRQs-fJyiS9B5OLoYBtCthaY7Q9-dR3QUpNDrIXQt-C7CdlmVoPvRZP7G9IjuvG6Sm117ivavy325zjbbVVU-b7Kg8JBxT6RktBCMGqe4c9oq6o2oPTGEUew1Y4UgkvOiIMxwSZnJqaidzRmuraBTNP_XBufcoY_hqOPP4XoQvQB3K1pb</recordid><startdate>2005</startdate><enddate>2005</enddate><creator>Cohen, E.</creator><creator>Betser, Y.</creator><creator>Sheinman, B.</creator><creator>Cohen, S.</creator><creator>Sidorov, V.</creator><creator>Gavrilov, A.</creator><creator>Ritter, D.</creator><general>IEEE</general><scope>6IE</scope><scope>6IH</scope><scope>CBEJK</scope><scope>RIE</scope><scope>RIO</scope></search><sort><creationdate>2005</creationdate><title>75 GHz InP HBT distributed amplifier with record figures of merit and low power dissipation for OEIC applications</title><author>Cohen, E. ; Betser, Y. ; Sheinman, B. ; Cohen, S. ; Sidorov, V. ; Gavrilov, A. ; Ritter, D.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-i90t-5f188436743ce95eead93fc7bf1c1430fa446718556614c5834c237bed240bd73</frbrgroupid><rsrctype>conference_proceedings</rsrctype><prefilter>conference_proceedings</prefilter><language>eng</language><creationdate>2005</creationdate><topic>Bandwidth</topic><topic>Diodes</topic><topic>Distributed amplifiers</topic><topic>Energy consumption</topic><topic>Gain</topic><topic>Heterojunction bipolar transistors</topic><topic>Indium phosphide</topic><topic>Optoelectronic devices</topic><topic>Power dissipation</topic><topic>Topology</topic><toplevel>online_resources</toplevel><creatorcontrib>Cohen, E.</creatorcontrib><creatorcontrib>Betser, Y.</creatorcontrib><creatorcontrib>Sheinman, B.</creatorcontrib><creatorcontrib>Cohen, S.</creatorcontrib><creatorcontrib>Sidorov, V.</creatorcontrib><creatorcontrib>Gavrilov, A.</creatorcontrib><creatorcontrib>Ritter, D.</creatorcontrib><collection>IEEE Electronic Library (IEL) Conference Proceedings</collection><collection>IEEE Proceedings Order Plan (POP) 1998-present by volume</collection><collection>IEEE Xplore All Conference Proceedings</collection><collection>IEEE Electronic Library (IEL)</collection><collection>IEEE Proceedings Order Plans (POP) 1998-present</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Cohen, E.</au><au>Betser, Y.</au><au>Sheinman, B.</au><au>Cohen, S.</au><au>Sidorov, V.</au><au>Gavrilov, A.</au><au>Ritter, D.</au><format>book</format><genre>proceeding</genre><ristype>CONF</ristype><atitle>75 GHz InP HBT distributed amplifier with record figures of merit and low power dissipation for OEIC applications</atitle><btitle>International Conference on Indium Phosphide and Related Materials, 2005</btitle><stitle>ICIPRM</stitle><date>2005</date><risdate>2005</risdate><spage>609</spage><epage>612</epage><pages>609-612</pages><issn>1092-8669</issn><isbn>9780780388918</isbn><isbn>0780388917</isbn><abstract>We present an InP HBT distributed amplifier with a bandwidth of 75 GHz, gain of 14 dB, and power consumption of 78 mW. The HBTs had a 600 nm thick collector, and hence relatively low f T and f MAX of 84 GHz and 150 GHz respectively. The thick collector is a tradeoff required in optoelectronic integrated receivers, in which the PIN diode layers are the same as the base collector layers. To obtain high PEN diode responsivity, the collector layer needs to be thicker than in optimized HBTs. The amplifier topology comprises an emitter follower at the input and a cascode stage, with a resistor and inductance at the emitter follower output, and a peaking line between the HBTs in the cascode stage. The amplifier exhibits matching at the input better than -10 dB up to 85 GHz. The chip contains 16 HBTs and it size is 1.7mm times 0.9 mm</abstract><pub>IEEE</pub><doi>10.1109/ICIPRM.2005.1517570</doi><tpages>4</tpages></addata></record> |
| fulltext | fulltext_linktorsrc |
| identifier | ISSN: 1092-8669 |
| ispartof | International Conference on Indium Phosphide and Related Materials, 2005, 2005, p.609-612 |
| issn | 1092-8669 |
| language | eng |
| recordid | cdi_ieee_primary_1517570 |
| source | IEEE Electronic Library (IEL) Conference Proceedings |
| subjects | Bandwidth Diodes Distributed amplifiers Energy consumption Gain Heterojunction bipolar transistors Indium phosphide Optoelectronic devices Power dissipation Topology |
| title | 75 GHz InP HBT distributed amplifier with record figures of merit and low power dissipation for OEIC applications |
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