Wavelength control of nitrided InAs/GaAs quantum dots in fiber-optic communication region

New atomic-layer nitridation process performed just after growth of InAs quantum dots produces red shift in the photoluminescence (PL) by more than 100 nm. Emission at >1.3 /spl mu/m was achieved at room temperature with no severe efficiency degradation.

Bibliographische Detailangaben

Hauptverfasser:	Kikuno, M., Mori, T., Seki, H., Matsusita, K., Kita, T., Wada, O.
Format:	Tagungsbericht
Sprache:	eng
Schlagworte:	Communication system control Gallium arsenide Nitrogen Optical fiber communication Quantum dots Radio frequency Semiconductor lasers Substrates Surface emitting lasers US Department of Transportation
Online-Zugang:	Volltext bestellen
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