Wavelength control of nitrided InAs/GaAs quantum dots in fiber-optic communication region
New atomic-layer nitridation process performed just after growth of InAs quantum dots produces red shift in the photoluminescence (PL) by more than 100 nm. Emission at >1.3 /spl mu/m was achieved at room temperature with no severe efficiency degradation.
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creator | Kikuno, M. Mori, T. Seki, H. Matsusita, K. Kita, T. Wada, O. |
description | New atomic-layer nitridation process performed just after growth of InAs quantum dots produces red shift in the photoluminescence (PL) by more than 100 nm. Emission at >1.3 /spl mu/m was achieved at room temperature with no severe efficiency degradation. |
doi_str_mv | 10.1109/ICIPRM.2005.1517500 |
format | Conference Proceeding |
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Emission at >1.3 /spl mu/m was achieved at room temperature with no severe efficiency degradation.</description><subject>Communication system control</subject><subject>Gallium arsenide</subject><subject>Nitrogen</subject><subject>Optical fiber communication</subject><subject>Quantum dots</subject><subject>Radio frequency</subject><subject>Semiconductor lasers</subject><subject>Substrates</subject><subject>Surface emitting lasers</subject><subject>US Department of Transportation</subject><issn>1092-8669</issn><isbn>9780780388918</isbn><isbn>0780388917</isbn><fulltext>true</fulltext><rsrctype>conference_proceeding</rsrctype><creationdate>2005</creationdate><recordtype>conference_proceeding</recordtype><sourceid>6IE</sourceid><sourceid>RIE</sourceid><recordid>eNotkN9KwzAYxQMqOOeeYDd5gXZJ-ifpZSk6CxNFFPFqfE2_zkibzDQTfHsDDg78bs45HA4ha85Szlm1aZv2-eUxFYwVKS-4LBi7IKtKKhaVKVVxdUkW0SkSVZbVNbmZ5y8W3VKoBfl4hx8c0R7CJ9XOBu9G6gZqTfCmx562tp43W6hn-n0CG04T7V2YqbF0MB36xB2D0TE5TSdrNATjLPV4iLglVwOMM67OXJK3-7vX5iHZPW3bpt4lJm4NidYCVIV8ANS87zqUsmO9QskHBJAcpS5kDiXAwIpcdyXXAjHPKpmXpeizbEnW_70GEfdHbybwv_vzE9kfE3JU0g</recordid><startdate>2005</startdate><enddate>2005</enddate><creator>Kikuno, M.</creator><creator>Mori, T.</creator><creator>Seki, H.</creator><creator>Matsusita, K.</creator><creator>Kita, T.</creator><creator>Wada, O.</creator><general>IEEE</general><scope>6IE</scope><scope>6IH</scope><scope>CBEJK</scope><scope>RIE</scope><scope>RIO</scope></search><sort><creationdate>2005</creationdate><title>Wavelength control of nitrided InAs/GaAs quantum dots in fiber-optic communication region</title><author>Kikuno, M. ; Mori, T. ; Seki, H. ; Matsusita, K. ; Kita, T. ; Wada, O.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-i175t-cc2a89e1faec1dbbe77b0d8e71feaa71e7c574a6aaf054cb61c2ee43974662d33</frbrgroupid><rsrctype>conference_proceedings</rsrctype><prefilter>conference_proceedings</prefilter><language>eng</language><creationdate>2005</creationdate><topic>Communication system control</topic><topic>Gallium arsenide</topic><topic>Nitrogen</topic><topic>Optical fiber communication</topic><topic>Quantum dots</topic><topic>Radio frequency</topic><topic>Semiconductor lasers</topic><topic>Substrates</topic><topic>Surface emitting lasers</topic><topic>US Department of Transportation</topic><toplevel>online_resources</toplevel><creatorcontrib>Kikuno, M.</creatorcontrib><creatorcontrib>Mori, T.</creatorcontrib><creatorcontrib>Seki, H.</creatorcontrib><creatorcontrib>Matsusita, K.</creatorcontrib><creatorcontrib>Kita, T.</creatorcontrib><creatorcontrib>Wada, O.</creatorcontrib><collection>IEEE Electronic Library (IEL) Conference Proceedings</collection><collection>IEEE Proceedings Order Plan (POP) 1998-present by volume</collection><collection>IEEE Xplore All Conference Proceedings</collection><collection>IEEE Electronic Library (IEL)</collection><collection>IEEE Proceedings Order Plans (POP) 1998-present</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Kikuno, M.</au><au>Mori, T.</au><au>Seki, H.</au><au>Matsusita, K.</au><au>Kita, T.</au><au>Wada, O.</au><format>book</format><genre>proceeding</genre><ristype>CONF</ristype><atitle>Wavelength control of nitrided InAs/GaAs quantum dots in fiber-optic communication region</atitle><btitle>International Conference on Indium Phosphide and Related Materials, 2005</btitle><stitle>ICIPRM</stitle><date>2005</date><risdate>2005</risdate><spage>355</spage><epage>358</epage><pages>355-358</pages><issn>1092-8669</issn><isbn>9780780388918</isbn><isbn>0780388917</isbn><abstract>New atomic-layer nitridation process performed just after growth of InAs quantum dots produces red shift in the photoluminescence (PL) by more than 100 nm. 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ispartof | International Conference on Indium Phosphide and Related Materials, 2005, 2005, p.355-358 |
issn | 1092-8669 |
language | eng |
recordid | cdi_ieee_primary_1517500 |
source | IEEE Electronic Library (IEL) Conference Proceedings |
subjects | Communication system control Gallium arsenide Nitrogen Optical fiber communication Quantum dots Radio frequency Semiconductor lasers Substrates Surface emitting lasers US Department of Transportation |
title | Wavelength control of nitrided InAs/GaAs quantum dots in fiber-optic communication region |
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