Wavelength control of nitrided InAs/GaAs quantum dots in fiber-optic communication region

New atomic-layer nitridation process performed just after growth of InAs quantum dots produces red shift in the photoluminescence (PL) by more than 100 nm. Emission at >1.3 /spl mu/m was achieved at room temperature with no severe efficiency degradation.

Gespeichert in:
Bibliographische Detailangaben
Hauptverfasser: Kikuno, M., Mori, T., Seki, H., Matsusita, K., Kita, T., Wada, O.
Format: Tagungsbericht
Sprache:eng
Schlagworte:
Online-Zugang:Volltext bestellen
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
container_end_page 358
container_issue
container_start_page 355
container_title
container_volume
creator Kikuno, M.
Mori, T.
Seki, H.
Matsusita, K.
Kita, T.
Wada, O.
description New atomic-layer nitridation process performed just after growth of InAs quantum dots produces red shift in the photoluminescence (PL) by more than 100 nm. Emission at >1.3 /spl mu/m was achieved at room temperature with no severe efficiency degradation.
doi_str_mv 10.1109/ICIPRM.2005.1517500
format Conference Proceeding
fullrecord <record><control><sourceid>ieee_6IE</sourceid><recordid>TN_cdi_ieee_primary_1517500</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><ieee_id>1517500</ieee_id><sourcerecordid>1517500</sourcerecordid><originalsourceid>FETCH-LOGICAL-i175t-cc2a89e1faec1dbbe77b0d8e71feaa71e7c574a6aaf054cb61c2ee43974662d33</originalsourceid><addsrcrecordid>eNotkN9KwzAYxQMqOOeeYDd5gXZJ-ifpZSk6CxNFFPFqfE2_zkibzDQTfHsDDg78bs45HA4ha85Szlm1aZv2-eUxFYwVKS-4LBi7IKtKKhaVKVVxdUkW0SkSVZbVNbmZ5y8W3VKoBfl4hx8c0R7CJ9XOBu9G6gZqTfCmx562tp43W6hn-n0CG04T7V2YqbF0MB36xB2D0TE5TSdrNATjLPV4iLglVwOMM67OXJK3-7vX5iHZPW3bpt4lJm4NidYCVIV8ANS87zqUsmO9QskHBJAcpS5kDiXAwIpcdyXXAjHPKpmXpeizbEnW_70GEfdHbybwv_vzE9kfE3JU0g</addsrcrecordid><sourcetype>Publisher</sourcetype><iscdi>true</iscdi><recordtype>conference_proceeding</recordtype></control><display><type>conference_proceeding</type><title>Wavelength control of nitrided InAs/GaAs quantum dots in fiber-optic communication region</title><source>IEEE Electronic Library (IEL) Conference Proceedings</source><creator>Kikuno, M. ; Mori, T. ; Seki, H. ; Matsusita, K. ; Kita, T. ; Wada, O.</creator><creatorcontrib>Kikuno, M. ; Mori, T. ; Seki, H. ; Matsusita, K. ; Kita, T. ; Wada, O.</creatorcontrib><description>New atomic-layer nitridation process performed just after growth of InAs quantum dots produces red shift in the photoluminescence (PL) by more than 100 nm. Emission at &gt;1.3 /spl mu/m was achieved at room temperature with no severe efficiency degradation.</description><identifier>ISSN: 1092-8669</identifier><identifier>ISBN: 9780780388918</identifier><identifier>ISBN: 0780388917</identifier><identifier>DOI: 10.1109/ICIPRM.2005.1517500</identifier><language>eng</language><publisher>IEEE</publisher><subject>Communication system control ; Gallium arsenide ; Nitrogen ; Optical fiber communication ; Quantum dots ; Radio frequency ; Semiconductor lasers ; Substrates ; Surface emitting lasers ; US Department of Transportation</subject><ispartof>International Conference on Indium Phosphide and Related Materials, 2005, 2005, p.355-358</ispartof><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/1517500$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>309,310,780,784,789,790,2058,4050,4051,27925,54920</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/1517500$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc></links><search><creatorcontrib>Kikuno, M.</creatorcontrib><creatorcontrib>Mori, T.</creatorcontrib><creatorcontrib>Seki, H.</creatorcontrib><creatorcontrib>Matsusita, K.</creatorcontrib><creatorcontrib>Kita, T.</creatorcontrib><creatorcontrib>Wada, O.</creatorcontrib><title>Wavelength control of nitrided InAs/GaAs quantum dots in fiber-optic communication region</title><title>International Conference on Indium Phosphide and Related Materials, 2005</title><addtitle>ICIPRM</addtitle><description>New atomic-layer nitridation process performed just after growth of InAs quantum dots produces red shift in the photoluminescence (PL) by more than 100 nm. Emission at &gt;1.3 /spl mu/m was achieved at room temperature with no severe efficiency degradation.</description><subject>Communication system control</subject><subject>Gallium arsenide</subject><subject>Nitrogen</subject><subject>Optical fiber communication</subject><subject>Quantum dots</subject><subject>Radio frequency</subject><subject>Semiconductor lasers</subject><subject>Substrates</subject><subject>Surface emitting lasers</subject><subject>US Department of Transportation</subject><issn>1092-8669</issn><isbn>9780780388918</isbn><isbn>0780388917</isbn><fulltext>true</fulltext><rsrctype>conference_proceeding</rsrctype><creationdate>2005</creationdate><recordtype>conference_proceeding</recordtype><sourceid>6IE</sourceid><sourceid>RIE</sourceid><recordid>eNotkN9KwzAYxQMqOOeeYDd5gXZJ-ifpZSk6CxNFFPFqfE2_zkibzDQTfHsDDg78bs45HA4ha85Szlm1aZv2-eUxFYwVKS-4LBi7IKtKKhaVKVVxdUkW0SkSVZbVNbmZ5y8W3VKoBfl4hx8c0R7CJ9XOBu9G6gZqTfCmx562tp43W6hn-n0CG04T7V2YqbF0MB36xB2D0TE5TSdrNATjLPV4iLglVwOMM67OXJK3-7vX5iHZPW3bpt4lJm4NidYCVIV8ANS87zqUsmO9QskHBJAcpS5kDiXAwIpcdyXXAjHPKpmXpeizbEnW_70GEfdHbybwv_vzE9kfE3JU0g</recordid><startdate>2005</startdate><enddate>2005</enddate><creator>Kikuno, M.</creator><creator>Mori, T.</creator><creator>Seki, H.</creator><creator>Matsusita, K.</creator><creator>Kita, T.</creator><creator>Wada, O.</creator><general>IEEE</general><scope>6IE</scope><scope>6IH</scope><scope>CBEJK</scope><scope>RIE</scope><scope>RIO</scope></search><sort><creationdate>2005</creationdate><title>Wavelength control of nitrided InAs/GaAs quantum dots in fiber-optic communication region</title><author>Kikuno, M. ; Mori, T. ; Seki, H. ; Matsusita, K. ; Kita, T. ; Wada, O.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-i175t-cc2a89e1faec1dbbe77b0d8e71feaa71e7c574a6aaf054cb61c2ee43974662d33</frbrgroupid><rsrctype>conference_proceedings</rsrctype><prefilter>conference_proceedings</prefilter><language>eng</language><creationdate>2005</creationdate><topic>Communication system control</topic><topic>Gallium arsenide</topic><topic>Nitrogen</topic><topic>Optical fiber communication</topic><topic>Quantum dots</topic><topic>Radio frequency</topic><topic>Semiconductor lasers</topic><topic>Substrates</topic><topic>Surface emitting lasers</topic><topic>US Department of Transportation</topic><toplevel>online_resources</toplevel><creatorcontrib>Kikuno, M.</creatorcontrib><creatorcontrib>Mori, T.</creatorcontrib><creatorcontrib>Seki, H.</creatorcontrib><creatorcontrib>Matsusita, K.</creatorcontrib><creatorcontrib>Kita, T.</creatorcontrib><creatorcontrib>Wada, O.</creatorcontrib><collection>IEEE Electronic Library (IEL) Conference Proceedings</collection><collection>IEEE Proceedings Order Plan (POP) 1998-present by volume</collection><collection>IEEE Xplore All Conference Proceedings</collection><collection>IEEE Electronic Library (IEL)</collection><collection>IEEE Proceedings Order Plans (POP) 1998-present</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Kikuno, M.</au><au>Mori, T.</au><au>Seki, H.</au><au>Matsusita, K.</au><au>Kita, T.</au><au>Wada, O.</au><format>book</format><genre>proceeding</genre><ristype>CONF</ristype><atitle>Wavelength control of nitrided InAs/GaAs quantum dots in fiber-optic communication region</atitle><btitle>International Conference on Indium Phosphide and Related Materials, 2005</btitle><stitle>ICIPRM</stitle><date>2005</date><risdate>2005</risdate><spage>355</spage><epage>358</epage><pages>355-358</pages><issn>1092-8669</issn><isbn>9780780388918</isbn><isbn>0780388917</isbn><abstract>New atomic-layer nitridation process performed just after growth of InAs quantum dots produces red shift in the photoluminescence (PL) by more than 100 nm. Emission at &gt;1.3 /spl mu/m was achieved at room temperature with no severe efficiency degradation.</abstract><pub>IEEE</pub><doi>10.1109/ICIPRM.2005.1517500</doi><tpages>4</tpages></addata></record>
fulltext fulltext_linktorsrc
identifier ISSN: 1092-8669
ispartof International Conference on Indium Phosphide and Related Materials, 2005, 2005, p.355-358
issn 1092-8669
language eng
recordid cdi_ieee_primary_1517500
source IEEE Electronic Library (IEL) Conference Proceedings
subjects Communication system control
Gallium arsenide
Nitrogen
Optical fiber communication
Quantum dots
Radio frequency
Semiconductor lasers
Substrates
Surface emitting lasers
US Department of Transportation
title Wavelength control of nitrided InAs/GaAs quantum dots in fiber-optic communication region
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2024-12-28T16%3A44%3A31IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-ieee_6IE&rft_val_fmt=info:ofi/fmt:kev:mtx:book&rft.genre=proceeding&rft.atitle=Wavelength%20control%20of%20nitrided%20InAs/GaAs%20quantum%20dots%20in%20fiber-optic%20communication%20region&rft.btitle=International%20Conference%20on%20Indium%20Phosphide%20and%20Related%20Materials,%202005&rft.au=Kikuno,%20M.&rft.date=2005&rft.spage=355&rft.epage=358&rft.pages=355-358&rft.issn=1092-8669&rft.isbn=9780780388918&rft.isbn_list=0780388917&rft_id=info:doi/10.1109/ICIPRM.2005.1517500&rft_dat=%3Cieee_6IE%3E1517500%3C/ieee_6IE%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rft_ieee_id=1517500&rfr_iscdi=true