InGaAs-InAlAs-InP HEMT technology for ultra-high frequency and ultra-low noise performance

InGaAs-InAlAs-InP HEMT technology for ultra-high frequency and ultra-low noise performance

InGaAs-InAlAs-InP HEMT is facing competition from the emerging MHEMT technology. Nonetheless, for top-performing applications requiring high gain and low noise, InP HEMT is still the preferred choice. We here present results from InP HEMT development for sub-100 nm gate length designs yielding f/sub...

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Hauptverfasser: Grahn, J., Starski, P., Malmkvist, M., Fridman, M., Malmros, A., Wang, S., Mellberg, A., Zirath, H.
Format: Tagungsbericht
Sprache:eng
Schlagworte:
Consumer electronics
Frequency
Gallium arsenide
HEMTs
Indium gallium arsenide
Indium phosphide
Laboratories
mHEMTs
Production
Space technology
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Beschreibung
Zusammenfassung:InGaAs-InAlAs-InP HEMT is facing competition from the emerging MHEMT technology. Nonetheless, for top-performing applications requiring high gain and low noise, InP HEMT is still the preferred choice. We here present results from InP HEMT development for sub-100 nm gate length designs yielding f/sub max/ above 400 GHz and ultra-low noise hybrid amplifiers with a minimum noise temperature of 1.1 K when operated under cryogenic conditions.
ISSN:1092-8669
DOI:10.1109/ICIPRM.2005.1517435