Si/Si(0.64)Ge(0.36)/Si pMOSFETs with Enhanced Voltage Gain and Low 1/f Noise
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| creator | Prest, M.J. Palmer, M.J. Braithwaite, G. Grasby, T.J. Phillips, P.J. Mironov, O.A. Parker, E.H.C. Whall, T.E. Waite, A.M. Evans, A.G.R. |
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| doi_str_mv | 10.1109/ESSDERC.2001.195230 |
| format | Conference Proceeding |
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| ispartof | 31st European Solid-State Device Research Conference, 2001, p.179-182 |
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| language | eng |
| recordid | cdi_ieee_primary_1506612 |
| source | IEEE Electronic Library (IEL) Conference Proceedings |
| subjects | Computer science Frequency Germanium silicon alloys Low voltage MOSFETs Noise reduction Oxidation Physics Silicon germanium Transconductance |
| title | Si/Si(0.64)Ge(0.36)/Si pMOSFETs with Enhanced Voltage Gain and Low 1/f Noise |
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