Current performance of high speed transistors
This work presents a comparison of high speed performance parameters between the main devices used nowadays in high speed demanding applications: SiGe HBT, InP HBT and InP HEMT. First of all, a description of the material properties and the structure characteristics is presented. Secondly, the merit...
Gespeichert in:
| Hauptverfasser: | , |
|---|---|
| Format: | Tagungsbericht |
| Sprache: | eng |
| Schlagworte: | |
| Online-Zugang: | Volltext bestellen |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
| container_end_page | 113 |
|---|---|
| container_issue | |
| container_start_page | 111 |
| container_title | |
| container_volume | |
| creator | Vinas, L.P. Llorens, D.B. |
| description | This work presents a comparison of high speed performance parameters between the main devices used nowadays in high speed demanding applications: SiGe HBT, InP HBT and InP HEMT. First of all, a description of the material properties and the structure characteristics is presented. Secondly, the merit figures that define the performance in this application field are discussed, and then the evolution of the transition frequency in the last twenty years is shown. |
| doi_str_mv | 10.1109/SCED.2005.1504322 |
| format | Conference Proceeding |
| fullrecord | <record><control><sourceid>ieee_6IE</sourceid><recordid>TN_cdi_ieee_primary_1504322</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><ieee_id>1504322</ieee_id><sourcerecordid>1504322</sourcerecordid><originalsourceid>FETCH-LOGICAL-i175t-99c9873c9fb722945a9840fac37b45ba4f31a3699dfa610d8ed77dc75c50953c3</originalsourceid><addsrcrecordid>eNotj81KAzEURoM_YK19AHGTF8h4k5tMcpcytioUXKjrkskkdsTODMm48O0t2G9zFgcOfIzdSqikBLp_a9aPlQIwlTSgUakztlC1RiER4Jxdg3WAzkmAi6OQNQpNVl6xVSlfcJw2GskumGh-co7DzKeY05gPfgiRj4nv-889L1OMHZ-zH0pf5jGXG3aZ_HeJqxOX7GOzfm-exfb16aV52IpeWjMLokDOYqDUWqVIG09OQ_IBbatN63VC6bEm6pKvJXQudtZ2wZpggAwGXLK7_24fY9xNuT_4_Ls7PcU_joNEUg</addsrcrecordid><sourcetype>Publisher</sourcetype><iscdi>true</iscdi><recordtype>conference_proceeding</recordtype></control><display><type>conference_proceeding</type><title>Current performance of high speed transistors</title><source>IEEE Electronic Library (IEL) Conference Proceedings</source><creator>Vinas, L.P. ; Llorens, D.B.</creator><creatorcontrib>Vinas, L.P. ; Llorens, D.B.</creatorcontrib><description>This work presents a comparison of high speed performance parameters between the main devices used nowadays in high speed demanding applications: SiGe HBT, InP HBT and InP HEMT. First of all, a description of the material properties and the structure characteristics is presented. Secondly, the merit figures that define the performance in this application field are discussed, and then the evolution of the transition frequency in the last twenty years is shown.</description><identifier>ISSN: 2163-4971</identifier><identifier>ISBN: 0780388100</identifier><identifier>ISBN: 9780780388109</identifier><identifier>EISSN: 2643-1300</identifier><identifier>DOI: 10.1109/SCED.2005.1504322</identifier><language>eng</language><publisher>IEEE</publisher><subject>Electron mobility ; Frequency ; Germanium silicon alloys ; HEMTs ; Heterojunction bipolar transistors ; Indium gallium arsenide ; Indium phosphide ; MESFETs ; MODFETs ; Silicon germanium</subject><ispartof>Conference on Electron Devices, 2005 Spanish, 2005, p.111-113</ispartof><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/1504322$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>309,310,776,780,785,786,2052,4036,4037,27902,54895</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/1504322$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc></links><search><creatorcontrib>Vinas, L.P.</creatorcontrib><creatorcontrib>Llorens, D.B.</creatorcontrib><title>Current performance of high speed transistors</title><title>Conference on Electron Devices, 2005 Spanish</title><addtitle>SCED</addtitle><description>This work presents a comparison of high speed performance parameters between the main devices used nowadays in high speed demanding applications: SiGe HBT, InP HBT and InP HEMT. First of all, a description of the material properties and the structure characteristics is presented. Secondly, the merit figures that define the performance in this application field are discussed, and then the evolution of the transition frequency in the last twenty years is shown.</description><subject>Electron mobility</subject><subject>Frequency</subject><subject>Germanium silicon alloys</subject><subject>HEMTs</subject><subject>Heterojunction bipolar transistors</subject><subject>Indium gallium arsenide</subject><subject>Indium phosphide</subject><subject>MESFETs</subject><subject>MODFETs</subject><subject>Silicon germanium</subject><issn>2163-4971</issn><issn>2643-1300</issn><isbn>0780388100</isbn><isbn>9780780388109</isbn><fulltext>true</fulltext><rsrctype>conference_proceeding</rsrctype><creationdate>2005</creationdate><recordtype>conference_proceeding</recordtype><sourceid>6IE</sourceid><sourceid>RIE</sourceid><recordid>eNotj81KAzEURoM_YK19AHGTF8h4k5tMcpcytioUXKjrkskkdsTODMm48O0t2G9zFgcOfIzdSqikBLp_a9aPlQIwlTSgUakztlC1RiER4Jxdg3WAzkmAi6OQNQpNVl6xVSlfcJw2GskumGh-co7DzKeY05gPfgiRj4nv-889L1OMHZ-zH0pf5jGXG3aZ_HeJqxOX7GOzfm-exfb16aV52IpeWjMLokDOYqDUWqVIG09OQ_IBbatN63VC6bEm6pKvJXQudtZ2wZpggAwGXLK7_24fY9xNuT_4_Ls7PcU_joNEUg</recordid><startdate>2005</startdate><enddate>2005</enddate><creator>Vinas, L.P.</creator><creator>Llorens, D.B.</creator><general>IEEE</general><scope>6IE</scope><scope>6IL</scope><scope>CBEJK</scope><scope>RIE</scope><scope>RIL</scope></search><sort><creationdate>2005</creationdate><title>Current performance of high speed transistors</title><author>Vinas, L.P. ; Llorens, D.B.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-i175t-99c9873c9fb722945a9840fac37b45ba4f31a3699dfa610d8ed77dc75c50953c3</frbrgroupid><rsrctype>conference_proceedings</rsrctype><prefilter>conference_proceedings</prefilter><language>eng</language><creationdate>2005</creationdate><topic>Electron mobility</topic><topic>Frequency</topic><topic>Germanium silicon alloys</topic><topic>HEMTs</topic><topic>Heterojunction bipolar transistors</topic><topic>Indium gallium arsenide</topic><topic>Indium phosphide</topic><topic>MESFETs</topic><topic>MODFETs</topic><topic>Silicon germanium</topic><toplevel>online_resources</toplevel><creatorcontrib>Vinas, L.P.</creatorcontrib><creatorcontrib>Llorens, D.B.</creatorcontrib><collection>IEEE Electronic Library (IEL) Conference Proceedings</collection><collection>IEEE Proceedings Order Plan All Online (POP All Online) 1998-present by volume</collection><collection>IEEE Xplore All Conference Proceedings</collection><collection>IEEE Electronic Library (IEL)</collection><collection>IEEE Proceedings Order Plans (POP All) 1998-Present</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Vinas, L.P.</au><au>Llorens, D.B.</au><format>book</format><genre>proceeding</genre><ristype>CONF</ristype><atitle>Current performance of high speed transistors</atitle><btitle>Conference on Electron Devices, 2005 Spanish</btitle><stitle>SCED</stitle><date>2005</date><risdate>2005</risdate><spage>111</spage><epage>113</epage><pages>111-113</pages><issn>2163-4971</issn><eissn>2643-1300</eissn><isbn>0780388100</isbn><isbn>9780780388109</isbn><abstract>This work presents a comparison of high speed performance parameters between the main devices used nowadays in high speed demanding applications: SiGe HBT, InP HBT and InP HEMT. First of all, a description of the material properties and the structure characteristics is presented. Secondly, the merit figures that define the performance in this application field are discussed, and then the evolution of the transition frequency in the last twenty years is shown.</abstract><pub>IEEE</pub><doi>10.1109/SCED.2005.1504322</doi><tpages>3</tpages></addata></record> |
| fulltext | fulltext_linktorsrc |
| identifier | ISSN: 2163-4971 |
| ispartof | Conference on Electron Devices, 2005 Spanish, 2005, p.111-113 |
| issn | 2163-4971 2643-1300 |
| language | eng |
| recordid | cdi_ieee_primary_1504322 |
| source | IEEE Electronic Library (IEL) Conference Proceedings |
| subjects | Electron mobility Frequency Germanium silicon alloys HEMTs Heterojunction bipolar transistors Indium gallium arsenide Indium phosphide MESFETs MODFETs Silicon germanium |
| title | Current performance of high speed transistors |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-28T22%3A53%3A03IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-ieee_6IE&rft_val_fmt=info:ofi/fmt:kev:mtx:book&rft.genre=proceeding&rft.atitle=Current%20performance%20of%20high%20speed%20transistors&rft.btitle=Conference%20on%20Electron%20Devices,%202005%20Spanish&rft.au=Vinas,%20L.P.&rft.date=2005&rft.spage=111&rft.epage=113&rft.pages=111-113&rft.issn=2163-4971&rft.eissn=2643-1300&rft.isbn=0780388100&rft.isbn_list=9780780388109&rft_id=info:doi/10.1109/SCED.2005.1504322&rft_dat=%3Cieee_6IE%3E1504322%3C/ieee_6IE%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rft_ieee_id=1504322&rfr_iscdi=true |