Controlled nucleation of InAs/GaAs and InGaAs/GaAs quantum dots for optoelectronic device integration

Controlled nucleation of InAs/GaAs and InGaAs/GaAs quantum dots for optoelectronic device integration

We demonstrate that InAs and InGaAs quantum dots can be grown selectively in specific regions of GaAs substrates using selective-area MOCVD. Growth parameters can be controlled to obtain high density ( /spl sim/10/sup 10//cm/sup 2/) of defect free quantum dots. Emission spectra from these selectivel...

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Hauptverfasser: Mokkapati, S., Wong-Leung, J., Tan, H.H., Jagadish, C., McBeanf, K.E., Phillips, M.R.
Format: Tagungsbericht
Sprache:eng
Schlagworte:
Atomic force microscopy
Dielectric substrates
Epitaxial growth
Gallium arsenide
Indium gallium arsenide
Optoelectronic devices
Quantum dot lasers
Quantum dots
US Department of Transportation
Waveguide lasers
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creator Mokkapati, S.
Wong-Leung, J.
Tan, H.H.
Jagadish, C.
McBeanf, K.E.
Phillips, M.R.
description We demonstrate that InAs and InGaAs quantum dots can be grown selectively in specific regions of GaAs substrates using selective-area MOCVD. Growth parameters can be controlled to obtain high density ( /spl sim/10/sup 10//cm/sup 2/) of defect free quantum dots. Emission spectra from these selectively grown dots are presented and are comparable in linewidth to that from dots grown on unpatterned substrates. We propose that this growth scheme can be used for fabrication of quantum dot lasers integrated with waveguides.
doi_str_mv 10.1109/NANO.2005.1500784
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source IEEE Electronic Library (IEL) Conference Proceedings
subjects Atomic force microscopy
Dielectric substrates
Epitaxial growth
Gallium arsenide
Indium gallium arsenide
Optoelectronic devices
Quantum dot lasers
Quantum dots
US Department of Transportation
Waveguide lasers
title Controlled nucleation of InAs/GaAs and InGaAs/GaAs quantum dots for optoelectronic device integration
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