Integrated HF CMOS-MEMS square-frame resonators with on-chip electronics and electrothermal narrow gap mechanism
A fully differential square frame resonator (SFR), operating at resonant frequencies of 6.184MHz and 17.63MHz for the fundamental and 2/sup nd/ harmonic, respectively, is introduced, which is the highest resonant frequency reported to date in CMOS-MEMS technology. In-plane CMOS-MEMS resonators have...
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| creator | Chiung-Cheng Lo Fang Chen Fedder, G.K. |
| description | A fully differential square frame resonator (SFR), operating at resonant frequencies of 6.184MHz and 17.63MHz for the fundamental and 2/sup nd/ harmonic, respectively, is introduced, which is the highest resonant frequency reported to date in CMOS-MEMS technology. In-plane CMOS-MEMS resonators have been fabricated directly on a conventional CMOS substrate with on-chip differential amplifiers. To enhance the output motional current, an electrothermal-actuated electrode is designed to reduce the input/output capacitive gap. A 5/spl mu/m-thick, 4 /spl mu/m-wide, 63 /spl mu/m-long SFR with fixed electrodes exhibits a quality factor of 996 in vacuum at 6.18MHz. |
| doi_str_mv | 10.1109/SENSOR.2005.1497511 |
| format | Conference Proceeding |
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In-plane CMOS-MEMS resonators have been fabricated directly on a conventional CMOS substrate with on-chip differential amplifiers. To enhance the output motional current, an electrothermal-actuated electrode is designed to reduce the input/output capacitive gap. A 5/spl mu/m-thick, 4 /spl mu/m-wide, 63 /spl mu/m-long SFR with fixed electrodes exhibits a quality factor of 996 in vacuum at 6.18MHz.</description><identifier>ISSN: 2159-547X</identifier><identifier>ISBN: 0780389948</identifier><identifier>ISBN: 9780780389946</identifier><identifier>DOI: 10.1109/SENSOR.2005.1497511</identifier><language>eng</language><publisher>IEEE</publisher><subject>Band pass filters ; CMOS technology ; Differential amplifiers ; Electrodes ; Electrothermal effects ; Hafnium ; Micromechanical devices ; Resonance ; Resonant frequency ; Voltage</subject><ispartof>The 13th International Conference on Solid-State Sensors, Actuators and Microsystems, 2005. Digest of Technical Papers. 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A 5/spl mu/m-thick, 4 /spl mu/m-wide, 63 /spl mu/m-long SFR with fixed electrodes exhibits a quality factor of 996 in vacuum at 6.18MHz.</description><subject>Band pass filters</subject><subject>CMOS technology</subject><subject>Differential amplifiers</subject><subject>Electrodes</subject><subject>Electrothermal effects</subject><subject>Hafnium</subject><subject>Micromechanical devices</subject><subject>Resonance</subject><subject>Resonant frequency</subject><subject>Voltage</subject><issn>2159-547X</issn><isbn>0780389948</isbn><isbn>9780780389946</isbn><fulltext>true</fulltext><rsrctype>conference_proceeding</rsrctype><creationdate>2005</creationdate><recordtype>conference_proceeding</recordtype><sourceid>6IE</sourceid><sourceid>RIE</sourceid><recordid>eNo1kEFPwjAYhpuoiYj8Ai79A8OWreu-oyEgJCKJ4-CNfOu-sRrWzbaG-O8lEZ_Lk-fyHl7GplLMpBTwVC7fyt37bC6EmskMtJLyhj0IXYi0AMiKWzaaSwWJyvTHPZuE8CkupJArKEZs2LhIR4-Rar5e8cV2Vybb5bbk4esbPSWNx464p9A7jL0P_Gxjy3uXmNYOnE5kou-dNYGjq_87tuQ7PHGH3vdnfsSBd2RadDZ0j-yuwVOgydVjtl8t94t18rp72SyeXxMLIiYajYYGLiqqJm8MEUiAZq5rkWsoTJUCmixXaV4JnWEmQNXQGFmJFOta5emYTf9mLREdBm879D-H6z_pL0uqXC8</recordid><startdate>2005</startdate><enddate>2005</enddate><creator>Chiung-Cheng Lo</creator><creator>Fang Chen</creator><creator>Fedder, G.K.</creator><general>IEEE</general><scope>6IE</scope><scope>6IL</scope><scope>CBEJK</scope><scope>RIE</scope><scope>RIL</scope></search><sort><creationdate>2005</creationdate><title>Integrated HF CMOS-MEMS square-frame resonators with on-chip electronics and electrothermal narrow gap mechanism</title><author>Chiung-Cheng Lo ; Fang Chen ; Fedder, G.K.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-i90t-7ac79f97ac8bf6fcee9199f27d06798cb39ac46536b074a4095d9fc1b03add563</frbrgroupid><rsrctype>conference_proceedings</rsrctype><prefilter>conference_proceedings</prefilter><language>eng</language><creationdate>2005</creationdate><topic>Band pass filters</topic><topic>CMOS technology</topic><topic>Differential amplifiers</topic><topic>Electrodes</topic><topic>Electrothermal effects</topic><topic>Hafnium</topic><topic>Micromechanical devices</topic><topic>Resonance</topic><topic>Resonant frequency</topic><topic>Voltage</topic><toplevel>online_resources</toplevel><creatorcontrib>Chiung-Cheng Lo</creatorcontrib><creatorcontrib>Fang Chen</creatorcontrib><creatorcontrib>Fedder, G.K.</creatorcontrib><collection>IEEE Electronic Library (IEL) Conference Proceedings</collection><collection>IEEE Proceedings Order Plan All Online (POP All Online) 1998-present by volume</collection><collection>IEEE Xplore All Conference Proceedings</collection><collection>IEEE Electronic Library (IEL)</collection><collection>IEEE Proceedings Order Plans (POP All) 1998-Present</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Chiung-Cheng Lo</au><au>Fang Chen</au><au>Fedder, G.K.</au><format>book</format><genre>proceeding</genre><ristype>CONF</ristype><atitle>Integrated HF CMOS-MEMS square-frame resonators with on-chip electronics and electrothermal narrow gap mechanism</atitle><btitle>The 13th International Conference on Solid-State Sensors, Actuators and Microsystems, 2005. Digest of Technical Papers. TRANSDUCERS '05</btitle><stitle>SENSOR</stitle><date>2005</date><risdate>2005</risdate><volume>2</volume><spage>2074</spage><epage>2077 Vol. 2</epage><pages>2074-2077 Vol. 2</pages><issn>2159-547X</issn><isbn>0780389948</isbn><isbn>9780780389946</isbn><abstract>A fully differential square frame resonator (SFR), operating at resonant frequencies of 6.184MHz and 17.63MHz for the fundamental and 2/sup nd/ harmonic, respectively, is introduced, which is the highest resonant frequency reported to date in CMOS-MEMS technology. In-plane CMOS-MEMS resonators have been fabricated directly on a conventional CMOS substrate with on-chip differential amplifiers. To enhance the output motional current, an electrothermal-actuated electrode is designed to reduce the input/output capacitive gap. A 5/spl mu/m-thick, 4 /spl mu/m-wide, 63 /spl mu/m-long SFR with fixed electrodes exhibits a quality factor of 996 in vacuum at 6.18MHz.</abstract><pub>IEEE</pub><doi>10.1109/SENSOR.2005.1497511</doi></addata></record> |
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| identifier | ISSN: 2159-547X |
| ispartof | The 13th International Conference on Solid-State Sensors, Actuators and Microsystems, 2005. Digest of Technical Papers. TRANSDUCERS '05, 2005, Vol.2, p.2074-2077 Vol. 2 |
| issn | 2159-547X |
| language | eng |
| recordid | cdi_ieee_primary_1497511 |
| source | IEEE Electronic Library (IEL) Conference Proceedings |
| subjects | Band pass filters CMOS technology Differential amplifiers Electrodes Electrothermal effects Hafnium Micromechanical devices Resonance Resonant frequency Voltage |
| title | Integrated HF CMOS-MEMS square-frame resonators with on-chip electronics and electrothermal narrow gap mechanism |
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