Substrate noise coupling effect characterization for RF CMOS LC VCOs
A generic, mixed-mode 0.18-/spl mu/m substrate is studied using a finite-element device simulator. The isolation properties of the device are extracted for guard ring structures of varying width. The effect of the substrate filtering on randomly switching noise is studied in the context of a 5-GHz C...
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| creator | Magierowski, S. Iniewskir, K. Siu, C. |
| description | A generic, mixed-mode 0.18-/spl mu/m substrate is studied using a finite-element device simulator. The isolation properties of the device are extracted for guard ring structures of varying width. The effect of the substrate filtering on randomly switching noise is studied in the context of a 5-GHz CMOS LC-VCO's phase noise performance. Poor high frequency noise damping (/spl sim/ -20 dB) in the substrate due to inductive blocking is responsible for significant degradation of oscillator phase noise in simulation. Measurement results of wideband substrate noise effects on oscillator phase noise are included. |
| doi_str_mv | 10.1109/NEWCAS.2005.1496758 |
| format | Conference Proceeding |
| fullrecord | <record><control><sourceid>ieee_6IE</sourceid><recordid>TN_cdi_ieee_primary_1496758</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><ieee_id>1496758</ieee_id><sourcerecordid>1496758</sourcerecordid><originalsourceid>FETCH-LOGICAL-i90t-9056666de57450bfecccc8f983879a9a14f15c752de1f4175996a5f848665ff43</originalsourceid><addsrcrecordid>eNotj99KwzAcRgMiTGafYDd5gdak-fu7HHFToVqww12OrEs0MtuRZBf69Ba2w4Hv7sCH0IKSilICD2-rrVl2VU2IqCgHqYS-QQUoTSaZBsbrGSpS-iYTDLgi8g49dud9ytFmh4cxJIf78Xw6huETO-9dn3H_ZaPts4vhz-YwDtiPEb-vsXltO9wY_GHadI9uvT0mV1x3jjbr1cY8l0379GKWTRmA5BKIkBMHJxQXZD_VJ7QHzbQCC5ZyT0WvRH1w1HOqBIC0wmuupRTeczZHi0s2OOd2pxh-bPzdXa-yf7QDSNA</addsrcrecordid><sourcetype>Publisher</sourcetype><iscdi>true</iscdi><recordtype>conference_proceeding</recordtype></control><display><type>conference_proceeding</type><title>Substrate noise coupling effect characterization for RF CMOS LC VCOs</title><source>IEEE Electronic Library (IEL) Conference Proceedings</source><creator>Magierowski, S. ; Iniewskir, K. ; Siu, C.</creator><creatorcontrib>Magierowski, S. ; Iniewskir, K. ; Siu, C.</creatorcontrib><description>A generic, mixed-mode 0.18-/spl mu/m substrate is studied using a finite-element device simulator. The isolation properties of the device are extracted for guard ring structures of varying width. The effect of the substrate filtering on randomly switching noise is studied in the context of a 5-GHz CMOS LC-VCO's phase noise performance. Poor high frequency noise damping (/spl sim/ -20 dB) in the substrate due to inductive blocking is responsible for significant degradation of oscillator phase noise in simulation. Measurement results of wideband substrate noise effects on oscillator phase noise are included.</description><identifier>ISBN: 9780780389342</identifier><identifier>ISBN: 0780389344</identifier><identifier>DOI: 10.1109/NEWCAS.2005.1496758</identifier><language>eng</language><publisher>IEEE</publisher><subject>Damping ; Degradation ; Filtering ; Finite element methods ; Noise measurement ; Oscillators ; Phase measurement ; Phase noise ; Radio frequency ; Wideband</subject><ispartof>The 3rd International IEEE-NEWCAS Conference, 2005, 2005, p.199-202</ispartof><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/1496758$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>309,310,780,784,789,790,2056,4047,4048,27923,54918</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/1496758$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc></links><search><creatorcontrib>Magierowski, S.</creatorcontrib><creatorcontrib>Iniewskir, K.</creatorcontrib><creatorcontrib>Siu, C.</creatorcontrib><title>Substrate noise coupling effect characterization for RF CMOS LC VCOs</title><title>The 3rd International IEEE-NEWCAS Conference, 2005</title><addtitle>NEWCAS</addtitle><description>A generic, mixed-mode 0.18-/spl mu/m substrate is studied using a finite-element device simulator. The isolation properties of the device are extracted for guard ring structures of varying width. The effect of the substrate filtering on randomly switching noise is studied in the context of a 5-GHz CMOS LC-VCO's phase noise performance. Poor high frequency noise damping (/spl sim/ -20 dB) in the substrate due to inductive blocking is responsible for significant degradation of oscillator phase noise in simulation. Measurement results of wideband substrate noise effects on oscillator phase noise are included.</description><subject>Damping</subject><subject>Degradation</subject><subject>Filtering</subject><subject>Finite element methods</subject><subject>Noise measurement</subject><subject>Oscillators</subject><subject>Phase measurement</subject><subject>Phase noise</subject><subject>Radio frequency</subject><subject>Wideband</subject><isbn>9780780389342</isbn><isbn>0780389344</isbn><fulltext>true</fulltext><rsrctype>conference_proceeding</rsrctype><creationdate>2005</creationdate><recordtype>conference_proceeding</recordtype><sourceid>6IE</sourceid><sourceid>RIE</sourceid><recordid>eNotj99KwzAcRgMiTGafYDd5gdak-fu7HHFToVqww12OrEs0MtuRZBf69Ba2w4Hv7sCH0IKSilICD2-rrVl2VU2IqCgHqYS-QQUoTSaZBsbrGSpS-iYTDLgi8g49dud9ytFmh4cxJIf78Xw6huETO-9dn3H_ZaPts4vhz-YwDtiPEb-vsXltO9wY_GHadI9uvT0mV1x3jjbr1cY8l0379GKWTRmA5BKIkBMHJxQXZD_VJ7QHzbQCC5ZyT0WvRH1w1HOqBIC0wmuupRTeczZHi0s2OOd2pxh-bPzdXa-yf7QDSNA</recordid><startdate>2005</startdate><enddate>2005</enddate><creator>Magierowski, S.</creator><creator>Iniewskir, K.</creator><creator>Siu, C.</creator><general>IEEE</general><scope>6IE</scope><scope>6IL</scope><scope>CBEJK</scope><scope>RIE</scope><scope>RIL</scope></search><sort><creationdate>2005</creationdate><title>Substrate noise coupling effect characterization for RF CMOS LC VCOs</title><author>Magierowski, S. ; Iniewskir, K. ; Siu, C.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-i90t-9056666de57450bfecccc8f983879a9a14f15c752de1f4175996a5f848665ff43</frbrgroupid><rsrctype>conference_proceedings</rsrctype><prefilter>conference_proceedings</prefilter><language>eng</language><creationdate>2005</creationdate><topic>Damping</topic><topic>Degradation</topic><topic>Filtering</topic><topic>Finite element methods</topic><topic>Noise measurement</topic><topic>Oscillators</topic><topic>Phase measurement</topic><topic>Phase noise</topic><topic>Radio frequency</topic><topic>Wideband</topic><toplevel>online_resources</toplevel><creatorcontrib>Magierowski, S.</creatorcontrib><creatorcontrib>Iniewskir, K.</creatorcontrib><creatorcontrib>Siu, C.</creatorcontrib><collection>IEEE Electronic Library (IEL) Conference Proceedings</collection><collection>IEEE Proceedings Order Plan All Online (POP All Online) 1998-present by volume</collection><collection>IEEE Xplore All Conference Proceedings</collection><collection>IEEE Electronic Library (IEL)</collection><collection>IEEE Proceedings Order Plans (POP All) 1998-Present</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Magierowski, S.</au><au>Iniewskir, K.</au><au>Siu, C.</au><format>book</format><genre>proceeding</genre><ristype>CONF</ristype><atitle>Substrate noise coupling effect characterization for RF CMOS LC VCOs</atitle><btitle>The 3rd International IEEE-NEWCAS Conference, 2005</btitle><stitle>NEWCAS</stitle><date>2005</date><risdate>2005</risdate><spage>199</spage><epage>202</epage><pages>199-202</pages><isbn>9780780389342</isbn><isbn>0780389344</isbn><abstract>A generic, mixed-mode 0.18-/spl mu/m substrate is studied using a finite-element device simulator. The isolation properties of the device are extracted for guard ring structures of varying width. The effect of the substrate filtering on randomly switching noise is studied in the context of a 5-GHz CMOS LC-VCO's phase noise performance. Poor high frequency noise damping (/spl sim/ -20 dB) in the substrate due to inductive blocking is responsible for significant degradation of oscillator phase noise in simulation. Measurement results of wideband substrate noise effects on oscillator phase noise are included.</abstract><pub>IEEE</pub><doi>10.1109/NEWCAS.2005.1496758</doi><tpages>4</tpages></addata></record> |
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| ispartof | The 3rd International IEEE-NEWCAS Conference, 2005, 2005, p.199-202 |
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| language | eng |
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| source | IEEE Electronic Library (IEL) Conference Proceedings |
| subjects | Damping Degradation Filtering Finite element methods Noise measurement Oscillators Phase measurement Phase noise Radio frequency Wideband |
| title | Substrate noise coupling effect characterization for RF CMOS LC VCOs |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-14T13%3A43%3A07IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-ieee_6IE&rft_val_fmt=info:ofi/fmt:kev:mtx:book&rft.genre=proceeding&rft.atitle=Substrate%20noise%20coupling%20effect%20characterization%20for%20RF%20CMOS%20LC%20VCOs&rft.btitle=The%203rd%20International%20IEEE-NEWCAS%20Conference,%202005&rft.au=Magierowski,%20S.&rft.date=2005&rft.spage=199&rft.epage=202&rft.pages=199-202&rft.isbn=9780780389342&rft.isbn_list=0780389344&rft_id=info:doi/10.1109/NEWCAS.2005.1496758&rft_dat=%3Cieee_6IE%3E1496758%3C/ieee_6IE%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rft_ieee_id=1496758&rfr_iscdi=true |