Tensile stress determination in silicon nitride membrane by AFM characterization

A silicon nitride layer deposited on silicon presents strong tensile residual stress. This stress may lead to cracks and failure for released membrane applications. The article demonstrates a novel way to determine the residual stress of a low stress silicon nitride membrane by non destructive metho...

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Bibliographische Detailangaben

Hauptverfasser:	Rollier, A.-S., Legrand, B., Deresmes, D., Lagouge, M., Collard, D., Buchaillot, L.
Format:	Tagungsbericht
Sprache:	eng
Schlagworte:	Analytical models Atomic force microscopy Atomic layer deposition Biomembranes Lead Residual stresses Resonance Resonant frequency Silicon Tensile stress
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