Study of N-channel MOSFETs with an enclosed-gate layout in a 0.18 /spl mu/m CMOS technology

Study of N-channel MOSFETs with an enclosed-gate layout in a 0.18 /spl mu/m CMOS technology

Enclosed-gate layout MOSFETs with guard rings have been fabricated in a commercial 0.18 /spl mu/m complementary metal-oxide-semiconductor technology. The static, small signal, and noise performance of the MOSFETs were determined before and after being subjected to ionizing radiation. The transistor...

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Veröffentlicht in:IEEE transactions on nuclear science 2005-08, Vol.52 (4), p.861-867
Hauptverfasser: Li Chen, Gingrich, D.M.
Format: Artikel
Sprache:eng
Schlagworte:
CMOS process
CMOS technology
Complementary metal-oxide-semiconductor (CMOS)
deep submicrometer (DSM)
enclosed-gate
Geometry
Integrated circuit technology
Ionizing radiation
Leakage current
MOSFETs
radiation
Semiconductor device manufacture
Semiconductor device noise
Threshold voltage
transistor
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Beschreibung
Zusammenfassung:Enclosed-gate layout MOSFETs with guard rings have been fabricated in a commercial 0.18 /spl mu/m complementary metal-oxide-semiconductor technology. The static, small signal, and noise performance of the MOSFETs were determined before and after being subjected to ionizing radiation. The transistor design could provide the basis for low-noise radiation-tolerant circuits.
ISSN:0018-9499
1558-1578
DOI:10.1109/TNS.2005.852652