Effect of STI shape and tunneling oxide thinning on cell Vth variation in the flash memory

We studied factors which affect cell Vth variation in the floating gate flash memory. By simulation and experiment, we showed that the shape of STI (shallow trench isolation) and the tunnel oxide thickness in the STI edge were the main control factors. For example, sharp and thin oxide in the STI ed...

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Bibliographische Detailangaben

Hauptverfasser:	JaiDong Lee, JungHwan Kim, Woong Lee, SangHoon Lee, HunYoung Lim, JaeDuk Lee, SeokWoo Nam, HyeonDeok Lee, ChangLyong Song
Format:	Tagungsbericht
Sprache:	eng
Schlagworte:	Fabrication Flash memory Flash memory cells Length measurement Medical simulation Oxidation Plasmas Shape Space exploration Tunneling
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