Significant improvement in reliability of HfSiON gate insulator

Instability during positive bias temperature (PBT) and channel hot carrier (CHC) stresses in an nFET is studied for a HfSiON gate insulator with an interface layer formed by several methods. The threshold voltage shift (/spl Delta/V/sub th/) during PBT stress shows strong dependence on the gate diel...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	Inoue, M., Yugami, J., Fujita, T., Shiga, K., Mizutani, M., Nomura, K., Tsuchimoto, J., Ohno, Y., Yoneda, M.
Format:	Tagungsbericht
Sprache:	eng
Schlagworte:	Chemicals Dielectrics Electron traps Hot carriers Insulation Plasma temperature Reliability engineering Stress Thermal degradation Threshold voltage
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