Hot carrier degradation of lateral DMOS transistor capacitance and reliability issues

This paper reports on an experimental evaluation of the hot-carrier impact on capacitances of high voltage DMOS transistors and their correlation with the degradation of DC characteristics. Two stress conditions were selected: (i) stress-A: at maximum drain voltage (near breakdown) and a gate voltag...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	Hefyene, N., Anghel, C., Gillon, R., Ionescu, A.M.
Format:	Tagungsbericht
Sprache:	eng
Schlagworte:	Breakdown voltage Capacitance measurement CMOS technology Degradation Hot carriers Scattering parameters Semiconductor device reliability Stress Switches Testing
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