Hot carrier degradation of lateral DMOS transistor capacitance and reliability issues

This paper reports on an experimental evaluation of the hot-carrier impact on capacitances of high voltage DMOS transistors and their correlation with the degradation of DC characteristics. Two stress conditions were selected: (i) stress-A: at maximum drain voltage (near breakdown) and a gate voltag...

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Hauptverfasser: Hefyene, N., Anghel, C., Gillon, R., Ionescu, A.M.
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description This paper reports on an experimental evaluation of the hot-carrier impact on capacitances of high voltage DMOS transistors and their correlation with the degradation of DC characteristics. Two stress conditions were selected: (i) stress-A: at maximum drain voltage (near breakdown) and a gate voltage providing maximum body-current, I/sub Bmax/, and; (ii) stress-B: at maximum drain and gate voltages, which are the most relevant for device reliability. The proposed investigations experimentally distinguish among drift-region degradation, for stress-A, and gate oxide degradation near the source-end, for stress-B. In the case of stress-B, while traditional DC evaluation of stress impact suggests a significant shift in the DC parameters, the DMOS AC characteristics appear considerably altered. This suggests the importance of the systematic experimental evaluation of the impact of hot-carrier degradation of AC characteristics and its correlation with DC degradation in order to explain the degradation mechanisms.
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fullrecord <record><control><sourceid>ieee_6IE</sourceid><recordid>TN_cdi_ieee_primary_1493146</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><ieee_id>1493146</ieee_id><sourcerecordid>1493146</sourcerecordid><originalsourceid>FETCH-LOGICAL-i175t-d5104ce1d9117678117e72cccf7225e6c5e1babdebaa77d82534eed41a3384a73</originalsourceid><addsrcrecordid>eNotUM1OwzAYi_iRGGNPsEteoCNfkzTpEY3BkIqGgB04TV-TbyiotFMSDnt7ipgl2wdbPpixOYgFgKhvX1fNy_pjUQqhF6BqCao6YxOopS3A1nDOroWxQto_XoyBVlAYUVZXbJbSlxihtDSlnbDtesjcYYyBIvf0GdFjDkPPhz3vMFPEjt8_b954jtinkPIQx_oBXcjYO-LYex6pC9iGLuQjDyn9ULphl3vsEs1OPmXbh9X7cl00m8en5V1TBDA6F16DUI7A1wCmMnZUMqVzbm_KUlPlNEGLracW0RhvSy0VkVeAUlqFRk7Z_H83ENHuEMM3xuPu9Ij8BV-tVEc</addsrcrecordid><sourcetype>Publisher</sourcetype><iscdi>true</iscdi><recordtype>conference_proceeding</recordtype></control><display><type>conference_proceeding</type><title>Hot carrier degradation of lateral DMOS transistor capacitance and reliability issues</title><source>IEEE Electronic Library (IEL) Conference Proceedings</source><creator>Hefyene, N. ; Anghel, C. ; Gillon, R. ; Ionescu, A.M.</creator><creatorcontrib>Hefyene, N. ; Anghel, C. ; Gillon, R. ; Ionescu, A.M.</creatorcontrib><description>This paper reports on an experimental evaluation of the hot-carrier impact on capacitances of high voltage DMOS transistors and their correlation with the degradation of DC characteristics. Two stress conditions were selected: (i) stress-A: at maximum drain voltage (near breakdown) and a gate voltage providing maximum body-current, I/sub Bmax/, and; (ii) stress-B: at maximum drain and gate voltages, which are the most relevant for device reliability. The proposed investigations experimentally distinguish among drift-region degradation, for stress-A, and gate oxide degradation near the source-end, for stress-B. In the case of stress-B, while traditional DC evaluation of stress impact suggests a significant shift in the DC parameters, the DMOS AC characteristics appear considerably altered. This suggests the importance of the systematic experimental evaluation of the impact of hot-carrier degradation of AC characteristics and its correlation with DC degradation in order to explain the degradation mechanisms.</description><identifier>ISSN: 1541-7026</identifier><identifier>ISBN: 0780388038</identifier><identifier>ISBN: 9780780388031</identifier><identifier>EISSN: 1938-1891</identifier><identifier>DOI: 10.1109/RELPHY.2005.1493146</identifier><language>eng</language><publisher>IEEE</publisher><subject>Breakdown voltage ; Capacitance measurement ; CMOS technology ; Degradation ; Hot carriers ; Scattering parameters ; Semiconductor device reliability ; Stress ; Switches ; Testing</subject><ispartof>2005 IEEE International Reliability Physics Symposium, 2005. Proceedings. 43rd Annual, 2005, p.551-554</ispartof><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/1493146$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>310,311,782,786,791,792,2060,4052,4053,27932,54927</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/1493146$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc></links><search><creatorcontrib>Hefyene, N.</creatorcontrib><creatorcontrib>Anghel, C.</creatorcontrib><creatorcontrib>Gillon, R.</creatorcontrib><creatorcontrib>Ionescu, A.M.</creatorcontrib><title>Hot carrier degradation of lateral DMOS transistor capacitance and reliability issues</title><title>2005 IEEE International Reliability Physics Symposium, 2005. Proceedings. 43rd Annual</title><addtitle>RELPHY</addtitle><description>This paper reports on an experimental evaluation of the hot-carrier impact on capacitances of high voltage DMOS transistors and their correlation with the degradation of DC characteristics. Two stress conditions were selected: (i) stress-A: at maximum drain voltage (near breakdown) and a gate voltage providing maximum body-current, I/sub Bmax/, and; (ii) stress-B: at maximum drain and gate voltages, which are the most relevant for device reliability. The proposed investigations experimentally distinguish among drift-region degradation, for stress-A, and gate oxide degradation near the source-end, for stress-B. In the case of stress-B, while traditional DC evaluation of stress impact suggests a significant shift in the DC parameters, the DMOS AC characteristics appear considerably altered. This suggests the importance of the systematic experimental evaluation of the impact of hot-carrier degradation of AC characteristics and its correlation with DC degradation in order to explain the degradation mechanisms.</description><subject>Breakdown voltage</subject><subject>Capacitance measurement</subject><subject>CMOS technology</subject><subject>Degradation</subject><subject>Hot carriers</subject><subject>Scattering parameters</subject><subject>Semiconductor device reliability</subject><subject>Stress</subject><subject>Switches</subject><subject>Testing</subject><issn>1541-7026</issn><issn>1938-1891</issn><isbn>0780388038</isbn><isbn>9780780388031</isbn><fulltext>true</fulltext><rsrctype>conference_proceeding</rsrctype><creationdate>2005</creationdate><recordtype>conference_proceeding</recordtype><sourceid>6IE</sourceid><sourceid>RIE</sourceid><recordid>eNotUM1OwzAYi_iRGGNPsEteoCNfkzTpEY3BkIqGgB04TV-TbyiotFMSDnt7ipgl2wdbPpixOYgFgKhvX1fNy_pjUQqhF6BqCao6YxOopS3A1nDOroWxQto_XoyBVlAYUVZXbJbSlxihtDSlnbDtesjcYYyBIvf0GdFjDkPPhz3vMFPEjt8_b954jtinkPIQx_oBXcjYO-LYex6pC9iGLuQjDyn9ULphl3vsEs1OPmXbh9X7cl00m8en5V1TBDA6F16DUI7A1wCmMnZUMqVzbm_KUlPlNEGLracW0RhvSy0VkVeAUlqFRk7Z_H83ENHuEMM3xuPu9Ij8BV-tVEc</recordid><startdate>2005</startdate><enddate>2005</enddate><creator>Hefyene, N.</creator><creator>Anghel, C.</creator><creator>Gillon, R.</creator><creator>Ionescu, A.M.</creator><general>IEEE</general><scope>6IE</scope><scope>6IH</scope><scope>CBEJK</scope><scope>RIE</scope><scope>RIO</scope></search><sort><creationdate>2005</creationdate><title>Hot carrier degradation of lateral DMOS transistor capacitance and reliability issues</title><author>Hefyene, N. ; Anghel, C. ; Gillon, R. ; Ionescu, A.M.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-i175t-d5104ce1d9117678117e72cccf7225e6c5e1babdebaa77d82534eed41a3384a73</frbrgroupid><rsrctype>conference_proceedings</rsrctype><prefilter>conference_proceedings</prefilter><language>eng</language><creationdate>2005</creationdate><topic>Breakdown voltage</topic><topic>Capacitance measurement</topic><topic>CMOS technology</topic><topic>Degradation</topic><topic>Hot carriers</topic><topic>Scattering parameters</topic><topic>Semiconductor device reliability</topic><topic>Stress</topic><topic>Switches</topic><topic>Testing</topic><toplevel>online_resources</toplevel><creatorcontrib>Hefyene, N.</creatorcontrib><creatorcontrib>Anghel, C.</creatorcontrib><creatorcontrib>Gillon, R.</creatorcontrib><creatorcontrib>Ionescu, A.M.</creatorcontrib><collection>IEEE Electronic Library (IEL) Conference Proceedings</collection><collection>IEEE Proceedings Order Plan (POP) 1998-present by volume</collection><collection>IEEE Xplore All Conference Proceedings</collection><collection>IEEE Electronic Library (IEL)</collection><collection>IEEE Proceedings Order Plans (POP) 1998-present</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Hefyene, N.</au><au>Anghel, C.</au><au>Gillon, R.</au><au>Ionescu, A.M.</au><format>book</format><genre>proceeding</genre><ristype>CONF</ristype><atitle>Hot carrier degradation of lateral DMOS transistor capacitance and reliability issues</atitle><btitle>2005 IEEE International Reliability Physics Symposium, 2005. Proceedings. 43rd Annual</btitle><stitle>RELPHY</stitle><date>2005</date><risdate>2005</risdate><spage>551</spage><epage>554</epage><pages>551-554</pages><issn>1541-7026</issn><eissn>1938-1891</eissn><isbn>0780388038</isbn><isbn>9780780388031</isbn><abstract>This paper reports on an experimental evaluation of the hot-carrier impact on capacitances of high voltage DMOS transistors and their correlation with the degradation of DC characteristics. Two stress conditions were selected: (i) stress-A: at maximum drain voltage (near breakdown) and a gate voltage providing maximum body-current, I/sub Bmax/, and; (ii) stress-B: at maximum drain and gate voltages, which are the most relevant for device reliability. The proposed investigations experimentally distinguish among drift-region degradation, for stress-A, and gate oxide degradation near the source-end, for stress-B. In the case of stress-B, while traditional DC evaluation of stress impact suggests a significant shift in the DC parameters, the DMOS AC characteristics appear considerably altered. This suggests the importance of the systematic experimental evaluation of the impact of hot-carrier degradation of AC characteristics and its correlation with DC degradation in order to explain the degradation mechanisms.</abstract><pub>IEEE</pub><doi>10.1109/RELPHY.2005.1493146</doi><tpages>4</tpages></addata></record>
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subjects Breakdown voltage
Capacitance measurement
CMOS technology
Degradation
Hot carriers
Scattering parameters
Semiconductor device reliability
Stress
Switches
Testing
title Hot carrier degradation of lateral DMOS transistor capacitance and reliability issues
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2024-12-05T19%3A21%3A44IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-ieee_6IE&rft_val_fmt=info:ofi/fmt:kev:mtx:book&rft.genre=proceeding&rft.atitle=Hot%20carrier%20degradation%20of%20lateral%20DMOS%20transistor%20capacitance%20and%20reliability%20issues&rft.btitle=2005%20IEEE%20International%20Reliability%20Physics%20Symposium,%202005.%20Proceedings.%2043rd%20Annual&rft.au=Hefyene,%20N.&rft.date=2005&rft.spage=551&rft.epage=554&rft.pages=551-554&rft.issn=1541-7026&rft.eissn=1938-1891&rft.isbn=0780388038&rft.isbn_list=9780780388031&rft_id=info:doi/10.1109/RELPHY.2005.1493146&rft_dat=%3Cieee_6IE%3E1493146%3C/ieee_6IE%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rft_ieee_id=1493146&rfr_iscdi=true