Investigation on the thermal distribution of nMOSFETs under different operation modes by scanning thermal microscopy

A Wollaston resistive probe based scanning thermal microscope (SThM) is used to investigate the thermal distribution within the gate channel of an nMOSFET with width to length ratio (W/L) of 2.0 /spl mu/m/3.0 /spl mu/m. The dynamic mode of SThM is used to detect and characterize thermal wave propaga...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	Hendarto, E., Altes, A., Heiderhoff, R., Phang, J.C.H., Balk, L.J.
Format:	Tagungsbericht
Sprache:	eng
Schlagworte:	Electric breakdown Electrons Failure analysis Microscopy MOSFET circuits Probes Reliability engineering Thermal degradation Thermal resistance Threshold voltage
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