The influence of a silicon dioxide-filled trench isolation structure and implanted sub-collector on latchup robustness
This paper demonstrates the effect of a new low-cost oxide filled trench isolation structure, and implanted sub-collectors, on the latchup robustness. With scaling and focus on low-cost wireless technology, new technologies are being developed utilizing a shallower oxide-filled trench structure and...
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| creator | Voldman, S. Gebreselasie, E. Lanzerotti, L. Larsen, T. Feilchenfeld, N. St Onge, S. Joseph, A. Dunn, J. |
| description | This paper demonstrates the effect of a new low-cost oxide filled trench isolation structure, and implanted sub-collectors, on the latchup robustness. With scaling and focus on low-cost wireless technology, new technologies are being developed utilizing a shallower oxide-filled trench structure and low-doped implanted sub-collectors. In this paper, the first latchup measurements and corresponding new discoveries are shown, utilizing this new isolation structure and its integration with implanted sub-collectors. This paper compares latchup measurements with the base CMOS technology (e.g. standard dual well p-substrate base technology) to quantify the net improvement. The results are shown with trench isolation only, sub-collector only, and the combined effect of the trench isolation and sub-collector. |
| doi_str_mv | 10.1109/RELPHY.2005.1493072 |
| format | Conference Proceeding |
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With scaling and focus on low-cost wireless technology, new technologies are being developed utilizing a shallower oxide-filled trench structure and low-doped implanted sub-collectors. In this paper, the first latchup measurements and corresponding new discoveries are shown, utilizing this new isolation structure and its integration with implanted sub-collectors. This paper compares latchup measurements with the base CMOS technology (e.g. standard dual well p-substrate base technology) to quantify the net improvement. The results are shown with trench isolation only, sub-collector only, and the combined effect of the trench isolation and sub-collector.</description><identifier>ISSN: 1541-7026</identifier><identifier>ISBN: 0780388038</identifier><identifier>ISBN: 9780780388031</identifier><identifier>EISSN: 1938-1891</identifier><identifier>DOI: 10.1109/RELPHY.2005.1493072</identifier><language>eng</language><publisher>IEEE</publisher><subject>BiCMOS integrated circuits ; CMOS technology ; Doping ; Germanium silicon alloys ; Isolation technology ; MOSFET circuits ; Radio frequency ; Robustness ; Silicon germanium ; Substrates</subject><ispartof>2005 IEEE International Reliability Physics Symposium, 2005. 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The results are shown with trench isolation only, sub-collector only, and the combined effect of the trench isolation and sub-collector.</description><subject>BiCMOS integrated circuits</subject><subject>CMOS technology</subject><subject>Doping</subject><subject>Germanium silicon alloys</subject><subject>Isolation technology</subject><subject>MOSFET circuits</subject><subject>Radio frequency</subject><subject>Robustness</subject><subject>Silicon germanium</subject><subject>Substrates</subject><issn>1541-7026</issn><issn>1938-1891</issn><isbn>0780388038</isbn><isbn>9780780388031</isbn><fulltext>true</fulltext><rsrctype>conference_proceeding</rsrctype><creationdate>2005</creationdate><recordtype>conference_proceeding</recordtype><sourceid>6IE</sourceid><sourceid>RIE</sourceid><recordid>eNotkEtLAzEUhYMPsNb-gm7yB1LzmMwkSynVCgOK1IWrksmDRtJJSTKi_96IPXC5i_PdC-cAsCR4RQiW92-b_nX7saIY8xVpJMMdvQAzIplAREhyCW5xJzATf3NVDd4Q1GHa3oBFzp-4quGso2IGvnYHC_3owmRHbWF0UMHsg9dxhMbHb28scj4Ea2BJFTlAn2NQxVc_lzTpMiUL1WigP56CGksF8zQgHeuNLjHBClZeH6YTTHGYchltznfg2qmQ7eK85-D9cbNbb1H_8vS8fuiRJx0vyHEsCZGNMqLVbKjRjG2V1IxbJxRjljJekyqlJWsppoNqqwxRgxtapTs2B8v_v95auz8lf1TpZ3-ujP0CMsxhLg</recordid><startdate>2005</startdate><enddate>2005</enddate><creator>Voldman, S.</creator><creator>Gebreselasie, E.</creator><creator>Lanzerotti, L.</creator><creator>Larsen, T.</creator><creator>Feilchenfeld, N.</creator><creator>St Onge, S.</creator><creator>Joseph, A.</creator><creator>Dunn, J.</creator><general>IEEE</general><scope>6IE</scope><scope>6IH</scope><scope>CBEJK</scope><scope>RIE</scope><scope>RIO</scope></search><sort><creationdate>2005</creationdate><title>The influence of a silicon dioxide-filled trench isolation structure and implanted sub-collector on latchup robustness</title><author>Voldman, S. ; Gebreselasie, E. ; Lanzerotti, L. ; Larsen, T. ; Feilchenfeld, N. ; St Onge, S. ; Joseph, A. ; Dunn, J.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-i175t-f5091194ad86c3b891de6a9c35ef8a33e235078aac936202ba6666d1abfb6ac73</frbrgroupid><rsrctype>conference_proceedings</rsrctype><prefilter>conference_proceedings</prefilter><language>eng</language><creationdate>2005</creationdate><topic>BiCMOS integrated circuits</topic><topic>CMOS technology</topic><topic>Doping</topic><topic>Germanium silicon alloys</topic><topic>Isolation technology</topic><topic>MOSFET circuits</topic><topic>Radio frequency</topic><topic>Robustness</topic><topic>Silicon germanium</topic><topic>Substrates</topic><toplevel>online_resources</toplevel><creatorcontrib>Voldman, S.</creatorcontrib><creatorcontrib>Gebreselasie, E.</creatorcontrib><creatorcontrib>Lanzerotti, L.</creatorcontrib><creatorcontrib>Larsen, T.</creatorcontrib><creatorcontrib>Feilchenfeld, N.</creatorcontrib><creatorcontrib>St Onge, S.</creatorcontrib><creatorcontrib>Joseph, A.</creatorcontrib><creatorcontrib>Dunn, J.</creatorcontrib><collection>IEEE Electronic Library (IEL) Conference Proceedings</collection><collection>IEEE Proceedings Order Plan (POP) 1998-present by volume</collection><collection>IEEE Xplore All Conference Proceedings</collection><collection>IEEE Electronic Library (IEL)</collection><collection>IEEE Proceedings Order Plans (POP) 1998-present</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Voldman, S.</au><au>Gebreselasie, E.</au><au>Lanzerotti, L.</au><au>Larsen, T.</au><au>Feilchenfeld, N.</au><au>St Onge, S.</au><au>Joseph, A.</au><au>Dunn, J.</au><format>book</format><genre>proceeding</genre><ristype>CONF</ristype><atitle>The influence of a silicon dioxide-filled trench isolation structure and implanted sub-collector on latchup robustness</atitle><btitle>2005 IEEE International Reliability Physics Symposium, 2005. Proceedings. 43rd Annual</btitle><stitle>RELPHY</stitle><date>2005</date><risdate>2005</risdate><spage>112</spage><epage>120</epage><pages>112-120</pages><issn>1541-7026</issn><eissn>1938-1891</eissn><isbn>0780388038</isbn><isbn>9780780388031</isbn><abstract>This paper demonstrates the effect of a new low-cost oxide filled trench isolation structure, and implanted sub-collectors, on the latchup robustness. With scaling and focus on low-cost wireless technology, new technologies are being developed utilizing a shallower oxide-filled trench structure and low-doped implanted sub-collectors. In this paper, the first latchup measurements and corresponding new discoveries are shown, utilizing this new isolation structure and its integration with implanted sub-collectors. This paper compares latchup measurements with the base CMOS technology (e.g. standard dual well p-substrate base technology) to quantify the net improvement. 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| fulltext | fulltext_linktorsrc |
| identifier | ISSN: 1541-7026 |
| ispartof | 2005 IEEE International Reliability Physics Symposium, 2005. Proceedings. 43rd Annual, 2005, p.112-120 |
| issn | 1541-7026 1938-1891 |
| language | eng |
| recordid | cdi_ieee_primary_1493072 |
| source | IEEE Electronic Library (IEL) Conference Proceedings |
| subjects | BiCMOS integrated circuits CMOS technology Doping Germanium silicon alloys Isolation technology MOSFET circuits Radio frequency Robustness Silicon germanium Substrates |
| title | The influence of a silicon dioxide-filled trench isolation structure and implanted sub-collector on latchup robustness |
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