Aluminium-induced crystallisation of amorphous silicon: parameter variation for optimisation of the process

Aluminium-induced crystallisation of amorphous silicon: parameter variation for optimisation of the process

Thin large-grained polycrystalline silicon (poly-Si) films can be formed on glass by aluminium-induced crystallisation (AIC) of amorphous silicon (a-Si) in an annealing process below the eutectic temperature of the Al/Si system. The influence of increasing the temperature during the anneal as well a...

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Hauptverfasser: Klein, J., Schneider, J., Muske, M., Heimburger, R., Gall, S., Fuhs, W.
Format: Tagungsbericht
Sprache:eng
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Aluminum
Amorphous silicon
Annealing
Artificial intelligence
Crystallization
Glass
Optical films
Semiconductor films
Substrates
Temperature
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creator Klein, J.
Schneider, J.
Muske, M.
Heimburger, R.
Gall, S.
Fuhs, W.
description Thin large-grained polycrystalline silicon (poly-Si) films can be formed on glass by aluminium-induced crystallisation (AIC) of amorphous silicon (a-Si) in an annealing process below the eutectic temperature of the Al/Si system. The influence of increasing the temperature during the anneal as well as the modification of the initial aluminium layer was investigated. In both cases similar or even larger silicon grains were achieved while reducing the process time.
doi_str_mv 10.1109/PVSC.2005.1488353
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fullrecord <record><control><sourceid>ieee_6IE</sourceid><recordid>TN_cdi_ieee_primary_1488353</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><ieee_id>1488353</ieee_id><sourcerecordid>1488353</sourcerecordid><originalsourceid>FETCH-LOGICAL-i175t-799e81571694d6f1cfc8eb1d5343368c7e9a74aa444ae68082a7f4d2ad2145d13</originalsourceid><addsrcrecordid>eNpNkMtqwzAURAVtoSH1B5Ru9ANOdS3JkroLpi8ItNDHNtxKMlFrW0ayC_n7BpJFh4HZnJnFEHINbAXAzO3r51uzqhiTKxBac8nPSGGUZgdzrZiqzsmCQc1KzRVckiLnb3aQkFwZuSA_627uwxDmvgyDm6131KZ9nrDrQsYpxIHGlmIf07iLc6Y5dMHG4Y6OmLD3k0_0F1M4km1MNI5T6P9Vp52nY4rW53xFLlrssi9OuSQfD_fvzVO5eXl8btabMoCSU6mM8RqkgtoIV7dgW6v9FzjJBee1tsobVAJRCIG-1kxXqFrhKnQVCOmAL8nNcTd477djCj2m_fZ0D_8Dy0Jbaw</addsrcrecordid><sourcetype>Publisher</sourcetype><iscdi>true</iscdi><recordtype>conference_proceeding</recordtype></control><display><type>conference_proceeding</type><title>Aluminium-induced crystallisation of amorphous silicon: parameter variation for optimisation of the process</title><source>IEEE Electronic Library (IEL) Conference Proceedings</source><creator>Klein, J. ; Schneider, J. ; Muske, M. ; Heimburger, R. ; Gall, S. ; Fuhs, W.</creator><creatorcontrib>Klein, J. ; Schneider, J. ; Muske, M. ; Heimburger, R. ; Gall, S. ; Fuhs, W.</creatorcontrib><description>Thin large-grained polycrystalline silicon (poly-Si) films can be formed on glass by aluminium-induced crystallisation (AIC) of amorphous silicon (a-Si) in an annealing process below the eutectic temperature of the Al/Si system. The influence of increasing the temperature during the anneal as well as the modification of the initial aluminium layer was investigated. In both cases similar or even larger silicon grains were achieved while reducing the process time.</description><identifier>ISSN: 0160-8371</identifier><identifier>ISBN: 9780780387072</identifier><identifier>ISBN: 0780387074</identifier><identifier>DOI: 10.1109/PVSC.2005.1488353</identifier><language>eng</language><publisher>IEEE</publisher><subject>Aluminum ; Amorphous silicon ; Annealing ; Artificial intelligence ; Crystallization ; Glass ; Optical films ; Semiconductor films ; Substrates ; Temperature</subject><ispartof>Conference Record of the Thirty-first IEEE Photovoltaic Specialists Conference, 2005, 2005, p.1197-1200</ispartof><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/1488353$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>309,310,780,784,789,790,2058,4050,4051,27925,54920</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/1488353$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc></links><search><creatorcontrib>Klein, J.</creatorcontrib><creatorcontrib>Schneider, J.</creatorcontrib><creatorcontrib>Muske, M.</creatorcontrib><creatorcontrib>Heimburger, R.</creatorcontrib><creatorcontrib>Gall, S.</creatorcontrib><creatorcontrib>Fuhs, W.</creatorcontrib><title>Aluminium-induced crystallisation of amorphous silicon: parameter variation for optimisation of the process</title><title>Conference Record of the Thirty-first IEEE Photovoltaic Specialists Conference, 2005</title><addtitle>PVSC</addtitle><description>Thin large-grained polycrystalline silicon (poly-Si) films can be formed on glass by aluminium-induced crystallisation (AIC) of amorphous silicon (a-Si) in an annealing process below the eutectic temperature of the Al/Si system. The influence of increasing the temperature during the anneal as well as the modification of the initial aluminium layer was investigated. In both cases similar or even larger silicon grains were achieved while reducing the process time.</description><subject>Aluminum</subject><subject>Amorphous silicon</subject><subject>Annealing</subject><subject>Artificial intelligence</subject><subject>Crystallization</subject><subject>Glass</subject><subject>Optical films</subject><subject>Semiconductor films</subject><subject>Substrates</subject><subject>Temperature</subject><issn>0160-8371</issn><isbn>9780780387072</isbn><isbn>0780387074</isbn><fulltext>true</fulltext><rsrctype>conference_proceeding</rsrctype><creationdate>2005</creationdate><recordtype>conference_proceeding</recordtype><sourceid>6IE</sourceid><sourceid>RIE</sourceid><recordid>eNpNkMtqwzAURAVtoSH1B5Ru9ANOdS3JkroLpi8ItNDHNtxKMlFrW0ayC_n7BpJFh4HZnJnFEHINbAXAzO3r51uzqhiTKxBac8nPSGGUZgdzrZiqzsmCQc1KzRVckiLnb3aQkFwZuSA_627uwxDmvgyDm6131KZ9nrDrQsYpxIHGlmIf07iLc6Y5dMHG4Y6OmLD3k0_0F1M4km1MNI5T6P9Vp52nY4rW53xFLlrssi9OuSQfD_fvzVO5eXl8btabMoCSU6mM8RqkgtoIV7dgW6v9FzjJBee1tsobVAJRCIG-1kxXqFrhKnQVCOmAL8nNcTd477djCj2m_fZ0D_8Dy0Jbaw</recordid><startdate>2005</startdate><enddate>2005</enddate><creator>Klein, J.</creator><creator>Schneider, J.</creator><creator>Muske, M.</creator><creator>Heimburger, R.</creator><creator>Gall, S.</creator><creator>Fuhs, W.</creator><general>IEEE</general><scope>6IE</scope><scope>6IH</scope><scope>CBEJK</scope><scope>RIE</scope><scope>RIO</scope></search><sort><creationdate>2005</creationdate><title>Aluminium-induced crystallisation of amorphous silicon: parameter variation for optimisation of the process</title><author>Klein, J. ; Schneider, J. ; Muske, M. ; Heimburger, R. ; Gall, S. ; Fuhs, W.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-i175t-799e81571694d6f1cfc8eb1d5343368c7e9a74aa444ae68082a7f4d2ad2145d13</frbrgroupid><rsrctype>conference_proceedings</rsrctype><prefilter>conference_proceedings</prefilter><language>eng</language><creationdate>2005</creationdate><topic>Aluminum</topic><topic>Amorphous silicon</topic><topic>Annealing</topic><topic>Artificial intelligence</topic><topic>Crystallization</topic><topic>Glass</topic><topic>Optical films</topic><topic>Semiconductor films</topic><topic>Substrates</topic><topic>Temperature</topic><toplevel>online_resources</toplevel><creatorcontrib>Klein, J.</creatorcontrib><creatorcontrib>Schneider, J.</creatorcontrib><creatorcontrib>Muske, M.</creatorcontrib><creatorcontrib>Heimburger, R.</creatorcontrib><creatorcontrib>Gall, S.</creatorcontrib><creatorcontrib>Fuhs, W.</creatorcontrib><collection>IEEE Electronic Library (IEL) Conference Proceedings</collection><collection>IEEE Proceedings Order Plan (POP) 1998-present by volume</collection><collection>IEEE Xplore All Conference Proceedings</collection><collection>IEEE Electronic Library (IEL)</collection><collection>IEEE Proceedings Order Plans (POP) 1998-present</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Klein, J.</au><au>Schneider, J.</au><au>Muske, M.</au><au>Heimburger, R.</au><au>Gall, S.</au><au>Fuhs, W.</au><format>book</format><genre>proceeding</genre><ristype>CONF</ristype><atitle>Aluminium-induced crystallisation of amorphous silicon: parameter variation for optimisation of the process</atitle><btitle>Conference Record of the Thirty-first IEEE Photovoltaic Specialists Conference, 2005</btitle><stitle>PVSC</stitle><date>2005</date><risdate>2005</risdate><spage>1197</spage><epage>1200</epage><pages>1197-1200</pages><issn>0160-8371</issn><isbn>9780780387072</isbn><isbn>0780387074</isbn><abstract>Thin large-grained polycrystalline silicon (poly-Si) films can be formed on glass by aluminium-induced crystallisation (AIC) of amorphous silicon (a-Si) in an annealing process below the eutectic temperature of the Al/Si system. The influence of increasing the temperature during the anneal as well as the modification of the initial aluminium layer was investigated. In both cases similar or even larger silicon grains were achieved while reducing the process time.</abstract><pub>IEEE</pub><doi>10.1109/PVSC.2005.1488353</doi><tpages>4</tpages></addata></record>
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subjects Aluminum
Amorphous silicon
Annealing
Artificial intelligence
Crystallization
Glass
Optical films
Semiconductor films
Substrates
Temperature
title Aluminium-induced crystallisation of amorphous silicon: parameter variation for optimisation of the process
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-04T10%3A01%3A22IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-ieee_6IE&rft_val_fmt=info:ofi/fmt:kev:mtx:book&rft.genre=proceeding&rft.atitle=Aluminium-induced%20crystallisation%20of%20amorphous%20silicon:%20parameter%20variation%20for%20optimisation%20of%20the%20process&rft.btitle=Conference%20Record%20of%20the%20Thirty-first%20IEEE%20Photovoltaic%20Specialists%20Conference,%202005&rft.au=Klein,%20J.&rft.date=2005&rft.spage=1197&rft.epage=1200&rft.pages=1197-1200&rft.issn=0160-8371&rft.isbn=9780780387072&rft.isbn_list=0780387074&rft_id=info:doi/10.1109/PVSC.2005.1488353&rft_dat=%3Cieee_6IE%3E1488353%3C/ieee_6IE%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rft_ieee_id=1488353&rfr_iscdi=true