Technical progress of high-quality, Ga-doped multicrystalline silicon wafers and solar cells

Average carrier lifetimes above 400 /spl mu/s are realized after proper P-diffusion and hydrogen passivation on Ga-doped multicrystalline Si wafers cut from a 70 kg ingot where the response to P-diffusion and hydrogen passivation is pronounced. High carrier lifetimes are realized over the whole ingo...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	Dhamrin, M., Kamisako, K., Saitoh, T., Eguchi, T., Hirasawa, T., Yamaga, I.
Format:	Tagungsbericht
Sprache:	eng
Schlagworte:	Boron Charge carrier lifetime Conductivity Degradation Hydrogen Passivation Photovoltaic cells Photovoltaic systems Silicon Solar power generation
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