Technical progress of high-quality, Ga-doped multicrystalline silicon wafers and solar cells

Average carrier lifetimes above 400 /spl mu/s are realized after proper P-diffusion and hydrogen passivation on Ga-doped multicrystalline Si wafers cut from a 70 kg ingot where the response to P-diffusion and hydrogen passivation is pronounced. High carrier lifetimes are realized over the whole ingo...

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Hauptverfasser:	Dhamrin, M., Kamisako, K., Saitoh, T., Eguchi, T., Hirasawa, T., Yamaga, I.
Format:	Tagungsbericht
Sprache:	eng
Schlagworte:	Boron Charge carrier lifetime Conductivity Degradation Hydrogen Passivation Photovoltaic cells Photovoltaic systems Silicon Solar power generation
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creator	Dhamrin, M. Kamisako, K. Saitoh, T. Eguchi, T. Hirasawa, T. Yamaga, I.
description	Average carrier lifetimes above 400 /spl mu/s are realized after proper P-diffusion and hydrogen passivation on Ga-doped multicrystalline Si wafers cut from a 70 kg ingot where the response to P-diffusion and hydrogen passivation is pronounced. High carrier lifetimes are realized over the whole ingot with minimum values of 20 /spl mu/s in the top of the ingot indicating the possible use of about 85% of the ingot for solar cell production. The effect of resistivity variation on solar cells conversion efficiency is investigated by means of PC-1D simulation. Conversion efficiencies above 15.5% are realized by utilizing more than 80% of the ingot. Efficiencies as high as 16% are realized on wafers with resistivities higher than 5/spl Omega//spl middot/cm demonstrating high conversion efficiency in high-resistivity, p-type multicrystalline silicon wafers.
doi_str_mv	10.1109/PVSC.2005.1488280
format	Conference Proceeding
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subjects	Boron Charge carrier lifetime Conductivity Degradation Hydrogen Passivation Photovoltaic cells Photovoltaic systems Silicon Solar power generation
title	Technical progress of high-quality, Ga-doped multicrystalline silicon wafers and solar cells
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