Design and performance of very high-speed In0.53Ga0.47As/In0.52Al0.48As p-i-n photodiodes grown by molecular beam epitaxy

Design and performance of very high-speed In0.53Ga0.47As/In0.52Al0.48As p-i-n photodiodes grown by molecular beam epitaxy

High-speed In 0.53 Ga 0.47 As/In 0.52 Al 0.48 As photodiodes have been grown by molecular beam epitaxy (MBE) on semi-insulating InP substrates and fabricated. The measured impulse response characteristics are very close to the analytically calculated ones. The temporal response to pulsed optical exc...

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Veröffentlicht in:IEEE electron device letters 1987-12, Vol.8 (12), p.579-581
Hauptverfasser: Zebda, Y., Bhattacharya, P., Tobin, M.S., Simpson, T.B.
Format: Artikel
Sprache:eng
Schlagworte:
Capacitance
Dark current
Diodes
High speed optical techniques
Indium phosphide
Molecular beam epitaxial growth
Optical pulses
Photodiodes
Space vector pulse width modulation
Substrates
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Zusammenfassung:High-speed In 0.53 Ga 0.47 As/In 0.52 Al 0.48 As photodiodes have been grown by molecular beam epitaxy (MBE) on semi-insulating InP substrates and fabricated. The measured impulse response characteristics are very close to the analytically calculated ones. The temporal response to pulsed optical excitation is characterized by a rise time of 21 ps and a width (FWHM) of 27 ps. The 25 × 20-µm 2 diodes have a junction capacitance
ISSN:0741-3106
1558-0563
DOI:10.1109/EDL.1987.26734