X-band monolithic series feedback LNA
An X -band monolithic three-stage low-noise amplifier (LNA) employing series feedback has demonstrated 1.8-dB noise figure with 30.0-dB gain and an input VSWR less than 1.2:1 at 10 GHz. The key to this design is using monolithic technology to obtain an exactly repeatable series feedback inductance t...
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| Veröffentlicht in: | IEEE transactions on electron devices 1985-12, Vol.32 (12), p.2729-2735 |
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| container_end_page | 2735 |
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| container_issue | 12 |
| container_start_page | 2729 |
| container_title | IEEE transactions on electron devices |
| container_volume | 32 |
| creator | Lehmann, R.E. Heston, D.D. |
| description | An X -band monolithic three-stage low-noise amplifier (LNA) employing series feedback has demonstrated 1.8-dB noise figure with 30.0-dB gain and an input VSWR less than 1.2:1 at 10 GHz. The key to this design is using monolithic technology to obtain an exactly repeatable series feedback inductance to achieve a simultaneous noise match and input VSWR match. |
| doi_str_mv | 10.1109/T-ED.1985.22408 |
| format | Article |
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The key to this design is using monolithic technology to obtain an exactly repeatable series feedback inductance to achieve a simultaneous noise match and input VSWR match.</description><subject>Applied sciences</subject><subject>Circuit properties</subject><subject>Electric, optical and optoelectronic circuits</subject><subject>Electronics</subject><subject>Exact sciences and technology</subject><subject>Field effect transistors</subject><subject>Gain</subject><subject>Impedance</subject><subject>Logic gates</subject><subject>Microwave circuits, microwave integrated circuits, microwave transmission lines, submillimeter wave circuits</subject><subject>Noise figure</subject><subject>Transmission line measurements</subject><issn>0018-9383</issn><issn>1557-9646</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>1985</creationdate><recordtype>article</recordtype><recordid>eNpFjztLA0EUhQdRMEZrC5sttJzN3Hns3ClDsj4gaBPBbpgnrubFThr_vRsjWh0OnO_AR8g1sBqAmcmStvMaDKqac8nwhIxAKU1NI5tTMmIMkBqB4pxclPIx1EZKPiJ3b9S7TazW28121e3fu1CV1HepVDml6F34rBbP00tylt2qpKvfHJPX-3Y5e6SLl4en2XRBA0fcUwwSuYocJbiI3jHM0TOQaLJ0WTZecB8xOK0heoHgwRivGkjCCKmTFmMyOf6GfltKn7Ld9d3a9V8WmD1Y2qVt5_ZgaX8sB-L2SOxcCW6Ve7cJXfnDNCrUDRtmN8dZl1L6P5WoQEnxDcV2WKI</recordid><startdate>19851201</startdate><enddate>19851201</enddate><creator>Lehmann, R.E.</creator><creator>Heston, D.D.</creator><general>IEEE</general><general>Institute of Electrical and Electronics Engineers</general><scope>IQODW</scope><scope>AAYXX</scope><scope>CITATION</scope></search><sort><creationdate>19851201</creationdate><title>X-band monolithic series feedback LNA</title><author>Lehmann, R.E. ; Heston, D.D.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c288t-8c4825d2841ad8ba08fdb01489f4af46b32bd8ca771db381b199b561e39347e73</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>1985</creationdate><topic>Applied sciences</topic><topic>Circuit properties</topic><topic>Electric, optical and optoelectronic circuits</topic><topic>Electronics</topic><topic>Exact sciences and technology</topic><topic>Field effect transistors</topic><topic>Gain</topic><topic>Impedance</topic><topic>Logic gates</topic><topic>Microwave circuits, microwave integrated circuits, microwave transmission lines, submillimeter wave circuits</topic><topic>Noise figure</topic><topic>Transmission line measurements</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Lehmann, R.E.</creatorcontrib><creatorcontrib>Heston, D.D.</creatorcontrib><collection>Pascal-Francis</collection><collection>CrossRef</collection><jtitle>IEEE transactions on electron devices</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Lehmann, R.E.</au><au>Heston, D.D.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>X-band monolithic series feedback LNA</atitle><jtitle>IEEE transactions on electron devices</jtitle><stitle>TED</stitle><date>1985-12-01</date><risdate>1985</risdate><volume>32</volume><issue>12</issue><spage>2729</spage><epage>2735</epage><pages>2729-2735</pages><issn>0018-9383</issn><eissn>1557-9646</eissn><coden>IETDAI</coden><abstract>An X -band monolithic three-stage low-noise amplifier (LNA) employing series feedback has demonstrated 1.8-dB noise figure with 30.0-dB gain and an input VSWR less than 1.2:1 at 10 GHz. The key to this design is using monolithic technology to obtain an exactly repeatable series feedback inductance to achieve a simultaneous noise match and input VSWR match.</abstract><cop>New York, NY</cop><pub>IEEE</pub><doi>10.1109/T-ED.1985.22408</doi><tpages>7</tpages></addata></record> |
| fulltext | fulltext_linktorsrc |
| identifier | ISSN: 0018-9383 |
| ispartof | IEEE transactions on electron devices, 1985-12, Vol.32 (12), p.2729-2735 |
| issn | 0018-9383 1557-9646 |
| language | eng |
| recordid | cdi_ieee_primary_1485154 |
| source | IEEE Electronic Library (IEL) |
| subjects | Applied sciences Circuit properties Electric, optical and optoelectronic circuits Electronics Exact sciences and technology Field effect transistors Gain Impedance Logic gates Microwave circuits, microwave integrated circuits, microwave transmission lines, submillimeter wave circuits Noise figure Transmission line measurements |
| title | X-band monolithic series feedback LNA |
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