Low temperature CMOS-a brief review

Bulk silicon CMOS applications at cryogenic temperatures are considered. It is argued that device improvements obtained from exploiting the dependence of physical characteristics of silicon at low temperature are above and beyond those improvements obtained from the usual geometric scaling of device...

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Veröffentlicht in:IEEE transactions on components, hybrids, and manufacturing technology hybrids, and manufacturing technology, 1992-06, Vol.15 (3), p.397-404
Hauptverfasser: Clark, W.F., El-Kareh, B., Pires, R.G., Titcomb, S.L., Anderson, R.L.
Format: Artikel
Sprache:eng
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