Threshold voltage in short-channel MOS devices

Threshold voltage in short-channel MOS devices

The threshold voltage in short-channel MOS transistors was investigated by use of a two-dimensional numerical solution of Poisson's equation and experimental measurements on devices of 5.15-, 3.15-, and 2.15-µm channel length. The assumption of constant equipotential surface in the oxide implic...

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Veröffentlicht in:IEEE transactions on electron devices 1985-01, Vol.32 (5), p.932-940
Hauptverfasser: Viswanathan, C.R., Burkey, B.C., Lubberts, G., Tredwell, T.J.
Format: Artikel
Sprache:eng
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Applied sciences
Electronics
Exact sciences and technology
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Transistors
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container_issue 5
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container_title IEEE transactions on electron devices
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creator Viswanathan, C.R.
Burkey, B.C.
Lubberts, G.
Tredwell, T.J.
description The threshold voltage in short-channel MOS transistors was investigated by use of a two-dimensional numerical solution of Poisson's equation and experimental measurements on devices of 5.15-, 3.15-, and 2.15-µm channel length. The assumption of constant equipotential surface in the oxide implicit in the charge-sharing technique is not valid in devices of shorter Channel lengths and at larger operating voltages. The numerical determination of the threshold voltage from the two-dimensional analysis agrees with experimental results. Unlike previous work, the charge-sharing model was investigated from an electric-field point of view. The inadequacies of the charge-sharing model are elucidated qualitatively and quantitatively.
doi_str_mv 10.1109/T-ED.1985.22050
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subjects Applied sciences
Electronics
Exact sciences and technology
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Transistors
title Threshold voltage in short-channel MOS devices
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