VTinstabilities of scaled MOSFET's with the top passivation structure composed of Silicon Nitride and silicate glass films
This paper describes the threshold-voltage instability mechanism on scaled p-channel MOSFET's with the double-layer top passivation structure composed of plasma silicon nitride and undoped silicate glass films under negative gate bias stress at high temperatures. From the results of this study,...
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| Veröffentlicht in: | IEEE transactions on electron devices 1984-12, Vol.31 (12), p.1687-1692 |
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| Hauptverfasser: | , |
| Format: | Artikel |
| Sprache: | eng |
| Online-Zugang: | Volltext bestellen |
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