Charge injection transistor based on real-space hot-electron transfer

We describe a new transistor based on hot-electron transfer between two conducting layers separated by a potential barrier. The mechanism of its operation consists of controlling charge injection over the barrier by modulating the electron temperature in one of the layers. This physical principle is...

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Veröffentlicht in:	IEEE transactions on electron devices 1984-06, Vol.31 (6), p.832-839
Hauptverfasser:	Luryi, S., Kastalsky, A., Gossard, A.C., Hendel, R.H.
Format:	Artikel
Sprache:	eng
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