A corrugated capacitor cell (CCC)

A corrugated capacitor cell (CCC)

A new MOS dynamic random access memory (dRAM) cell named "CCC" has been successfully developed based on a one-device cell concept. This CCC is characterized by an etched-moat storage-capacitor extended into the substrate, resulting in almost independent increase in storage capacitance C S...

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Veröffentlicht in:IEEE transactions on electron devices 1984-01, Vol.31 (6), p.746-753
Hauptverfasser: Sunami, H., Kure, T., Hashimoto, N., Itoh, K., Toyabe, T., Asai, S.
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container_end_page 753
container_issue 6
container_start_page 746
container_title IEEE transactions on electron devices
container_volume 31
creator Sunami, H.
Kure, T.
Hashimoto, N.
Itoh, K.
Toyabe, T.
Asai, S.
description A new MOS dynamic random access memory (dRAM) cell named "CCC" has been successfully developed based on a one-device cell concept. This CCC is characterized by an etched-moat storage-capacitor extended into the substrate, resulting in almost independent increase in storage capacitance C S of its cell size. A typical C S value of 60 fF has been obtained with 3 × 7 µm 2 CCC having a 4-µm deep moat and a capacitor insulator equivalent to 15 nm SiO 2 in thickness. The CCC is discussed in terms of its capacitance characteristics, dRAM operation with unit 32-Kbit array, some limiting factor to its closer packing, and future considerations.
doi_str_mv 10.1109/T-ED.1984.21602
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title A corrugated capacitor cell (CCC)
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