Cadmium telluride films and solar cells
CdTe thin films for solar cell applications have been deposited by close-spaced vapor transport and by hot-wall vacuum evaporation. As-deposited films are p-type with hole densities that increase to values of 1 × 10 16 cm -3 with increasing substrate temperature. A variety of experimental results ca...
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| Veröffentlicht in: | IEEE Trans. Electron Devices; (United States) 1984-05, Vol.31 (5), p.528-538 |
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| container_title | IEEE Trans. Electron Devices; (United States) |
| container_volume | 31 |
| creator | Bube, R.H. Fahrenbruch, A.L. Sinclair, R. Anthony, T.C. Fortmann, C. Huber, W. Chun-Teh Lee Thorpe, T. Yamashita, T. |
| description | CdTe thin films for solar cell applications have been deposited by close-spaced vapor transport and by hot-wall vacuum evaporation. As-deposited films are p-type with hole densities that increase to values of 1 × 10 16 cm -3 with increasing substrate temperature. A variety of experimental results can be interpreted either in terms of doping by native defects such as cadmium vacancies or doping by diffusion from the graphite substrate, with evidence for self-compensation. Many CdS/CdTe/graphite solar cells have been prepared by vacuum evaporation of CdS onto thin-film CdTe, which have low values of J_{O} \sim 10^{-9} A/cm 2 and high values of J_{SC} \sim 17 mA/cm 2 . The open-circuit voltage is low at 0.48 V for CdS deposition at 300° C, but increases with decreasing CdS deposition temperature. The highest efficiency prepared to date is 6.4 percent. Tile efficiency is limited at present by the fill factor, associated with a total series resistivity in the light of the order of 10 Ω-cm 2 . Supporting research on low-resistance contacts to p-type CdTe, grain boundary properties and passivation in p-type CdTe bicrystals and thin films, and high-resolution transmission electron microscopy of junction interfaces is briefly described. |
| doi_str_mv | 10.1109/T-ED.1984.21564 |
| format | Article |
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As-deposited films are p-type with hole densities that increase to values of 1 × 10 16 cm -3 with increasing substrate temperature. A variety of experimental results can be interpreted either in terms of doping by native defects such as cadmium vacancies or doping by diffusion from the graphite substrate, with evidence for self-compensation. Many CdS/CdTe/graphite solar cells have been prepared by vacuum evaporation of CdS onto thin-film CdTe, which have low values of J_{O} \sim 10^{-9} A/cm 2 and high values of J_{SC} \sim 17 mA/cm 2 . The open-circuit voltage is low at 0.48 V for CdS deposition at 300° C, but increases with decreasing CdS deposition temperature. The highest efficiency prepared to date is 6.4 percent. Tile efficiency is limited at present by the fill factor, associated with a total series resistivity in the light of the order of 10 Ω-cm 2 . Supporting research on low-resistance contacts to p-type CdTe, grain boundary properties and passivation in p-type CdTe bicrystals and thin films, and high-resolution transmission electron microscopy of junction interfaces is briefly described.</description><identifier>ISSN: 0018-9383</identifier><identifier>EISSN: 1557-9646</identifier><identifier>DOI: 10.1109/T-ED.1984.21564</identifier><identifier>CODEN: IETDAI</identifier><language>eng</language><publisher>United States: IEEE</publisher><subject>140501 - Solar Energy Conversion- Photovoltaic Conversion ; CADMIUM COMPOUNDS ; CADMIUM TELLURIDE SOLAR CELLS ; CADMIUM TELLURIDES ; CHALCOGENIDES ; CHEMICAL COATING ; CHEMICAL VAPOR DEPOSITION ; CRYSTAL DOPING ; CURRENT DENSITY ; DEPOSITION ; DIRECT ENERGY CONVERTERS ; EFFICIENCY ; ELECTRIC CONDUCTIVITY ; ELECTRIC POTENTIAL ; ELECTRICAL PROPERTIES ; FABRICATION ; MATERIALS ; P-TYPE CONDUCTORS ; PHOTOCONDUCTIVITY ; PHOTOELECTRIC CELLS ; PHOTOVOLTAIC CELLS ; PHYSICAL PROPERTIES ; SEMICONDUCTOR MATERIALS ; SOLAR CELLS ; SOLAR ENERGY ; SOLAR EQUIPMENT ; SURFACE COATING ; TELLURIDES ; TELLURIUM COMPOUNDS ; TEMPERATURE DEPENDENCE ; THIN FILMS ; VACUUM COATING</subject><ispartof>IEEE Trans. Electron Devices; (United States), 1984-05, Vol.31 (5), p.528-538</ispartof><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c348t-b49dabfae752cf614d3f4dfe2fce3b0d58dfd5cf4c55dce0edda6a8d64a0d58d3</citedby></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/1483849$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>314,780,784,796,885,27923,27924,54757</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/1483849$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc><backlink>$$Uhttps://www.osti.gov/biblio/6155689$$D View this record in Osti.gov$$Hfree_for_read</backlink></links><search><creatorcontrib>Bube, R.H.</creatorcontrib><creatorcontrib>Fahrenbruch, A.L.</creatorcontrib><creatorcontrib>Sinclair, R.</creatorcontrib><creatorcontrib>Anthony, T.C.</creatorcontrib><creatorcontrib>Fortmann, C.</creatorcontrib><creatorcontrib>Huber, W.</creatorcontrib><creatorcontrib>Chun-Teh Lee</creatorcontrib><creatorcontrib>Thorpe, T.</creatorcontrib><creatorcontrib>Yamashita, T.</creatorcontrib><creatorcontrib>Department of Materials Science and Engineering, Stanford Univ., Stanford, CA</creatorcontrib><title>Cadmium telluride films and solar cells</title><title>IEEE Trans. Electron Devices; (United States)</title><addtitle>TED</addtitle><description>CdTe thin films for solar cell applications have been deposited by close-spaced vapor transport and by hot-wall vacuum evaporation. As-deposited films are p-type with hole densities that increase to values of 1 × 10 16 cm -3 with increasing substrate temperature. A variety of experimental results can be interpreted either in terms of doping by native defects such as cadmium vacancies or doping by diffusion from the graphite substrate, with evidence for self-compensation. Many CdS/CdTe/graphite solar cells have been prepared by vacuum evaporation of CdS onto thin-film CdTe, which have low values of J_{O} \sim 10^{-9} A/cm 2 and high values of J_{SC} \sim 17 mA/cm 2 . The open-circuit voltage is low at 0.48 V for CdS deposition at 300° C, but increases with decreasing CdS deposition temperature. The highest efficiency prepared to date is 6.4 percent. Tile efficiency is limited at present by the fill factor, associated with a total series resistivity in the light of the order of 10 Ω-cm 2 . Supporting research on low-resistance contacts to p-type CdTe, grain boundary properties and passivation in p-type CdTe bicrystals and thin films, and high-resolution transmission electron microscopy of junction interfaces is briefly described.</description><subject>140501 - Solar Energy Conversion- Photovoltaic Conversion</subject><subject>CADMIUM COMPOUNDS</subject><subject>CADMIUM TELLURIDE SOLAR CELLS</subject><subject>CADMIUM TELLURIDES</subject><subject>CHALCOGENIDES</subject><subject>CHEMICAL COATING</subject><subject>CHEMICAL VAPOR DEPOSITION</subject><subject>CRYSTAL DOPING</subject><subject>CURRENT DENSITY</subject><subject>DEPOSITION</subject><subject>DIRECT ENERGY CONVERTERS</subject><subject>EFFICIENCY</subject><subject>ELECTRIC CONDUCTIVITY</subject><subject>ELECTRIC POTENTIAL</subject><subject>ELECTRICAL PROPERTIES</subject><subject>FABRICATION</subject><subject>MATERIALS</subject><subject>P-TYPE CONDUCTORS</subject><subject>PHOTOCONDUCTIVITY</subject><subject>PHOTOELECTRIC CELLS</subject><subject>PHOTOVOLTAIC CELLS</subject><subject>PHYSICAL PROPERTIES</subject><subject>SEMICONDUCTOR MATERIALS</subject><subject>SOLAR CELLS</subject><subject>SOLAR ENERGY</subject><subject>SOLAR EQUIPMENT</subject><subject>SURFACE COATING</subject><subject>TELLURIDES</subject><subject>TELLURIUM COMPOUNDS</subject><subject>TEMPERATURE DEPENDENCE</subject><subject>THIN FILMS</subject><subject>VACUUM COATING</subject><issn>0018-9383</issn><issn>1557-9646</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>1984</creationdate><recordtype>article</recordtype><recordid>eNqNkL1PwzAQxS0EEqUwM7BEDDClteOz44yoLR9SJZYyW659Fkb5ADsZ-O9JGyRWptPp_d7p3iPkmtEFY7Ra7vLNesEqBYuCCQknZMaEKPNKgjwlM0qZyiuu-Dm5SOljXCVAMSP3K-OaMDRZj3U9xOAw86FuUmZal6WuNjGzo5IuyZk3dcKr3zknb4-b3eo5374-vawetrnloPp8D5Uze2-wFIX1koHjHpzHwlvke-qEct4J68EK4SxSdM5Io5wEcxT5nNxOd7vUB51s6NG-265t0fZajomkqkboboI-Y_c1YOp1E9LhTdNiNyRdAOOSFeX_QFrCCC4n0MYupYhef8bQmPitGdWHevVOb9b6UK8-1js6biZHQMQ_GhRXUPEfe_l2Uw</recordid><startdate>19840501</startdate><enddate>19840501</enddate><creator>Bube, R.H.</creator><creator>Fahrenbruch, A.L.</creator><creator>Sinclair, R.</creator><creator>Anthony, T.C.</creator><creator>Fortmann, C.</creator><creator>Huber, W.</creator><creator>Chun-Teh Lee</creator><creator>Thorpe, T.</creator><creator>Yamashita, T.</creator><general>IEEE</general><scope>AAYXX</scope><scope>CITATION</scope><scope>7SP</scope><scope>7U5</scope><scope>8FD</scope><scope>L7M</scope><scope>H8D</scope><scope>OTOTI</scope></search><sort><creationdate>19840501</creationdate><title>Cadmium telluride films and solar cells</title><author>Bube, R.H. ; Fahrenbruch, A.L. ; Sinclair, R. ; Anthony, T.C. ; Fortmann, C. ; Huber, W. ; Chun-Teh Lee ; Thorpe, T. ; Yamashita, T.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c348t-b49dabfae752cf614d3f4dfe2fce3b0d58dfd5cf4c55dce0edda6a8d64a0d58d3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>1984</creationdate><topic>140501 - Solar Energy Conversion- Photovoltaic Conversion</topic><topic>CADMIUM COMPOUNDS</topic><topic>CADMIUM TELLURIDE SOLAR CELLS</topic><topic>CADMIUM TELLURIDES</topic><topic>CHALCOGENIDES</topic><topic>CHEMICAL COATING</topic><topic>CHEMICAL VAPOR DEPOSITION</topic><topic>CRYSTAL DOPING</topic><topic>CURRENT DENSITY</topic><topic>DEPOSITION</topic><topic>DIRECT ENERGY CONVERTERS</topic><topic>EFFICIENCY</topic><topic>ELECTRIC CONDUCTIVITY</topic><topic>ELECTRIC POTENTIAL</topic><topic>ELECTRICAL PROPERTIES</topic><topic>FABRICATION</topic><topic>MATERIALS</topic><topic>P-TYPE CONDUCTORS</topic><topic>PHOTOCONDUCTIVITY</topic><topic>PHOTOELECTRIC CELLS</topic><topic>PHOTOVOLTAIC CELLS</topic><topic>PHYSICAL PROPERTIES</topic><topic>SEMICONDUCTOR MATERIALS</topic><topic>SOLAR CELLS</topic><topic>SOLAR ENERGY</topic><topic>SOLAR EQUIPMENT</topic><topic>SURFACE COATING</topic><topic>TELLURIDES</topic><topic>TELLURIUM COMPOUNDS</topic><topic>TEMPERATURE DEPENDENCE</topic><topic>THIN FILMS</topic><topic>VACUUM COATING</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Bube, R.H.</creatorcontrib><creatorcontrib>Fahrenbruch, A.L.</creatorcontrib><creatorcontrib>Sinclair, R.</creatorcontrib><creatorcontrib>Anthony, T.C.</creatorcontrib><creatorcontrib>Fortmann, C.</creatorcontrib><creatorcontrib>Huber, W.</creatorcontrib><creatorcontrib>Chun-Teh Lee</creatorcontrib><creatorcontrib>Thorpe, T.</creatorcontrib><creatorcontrib>Yamashita, T.</creatorcontrib><creatorcontrib>Department of Materials Science and Engineering, Stanford Univ., Stanford, CA</creatorcontrib><collection>CrossRef</collection><collection>Electronics & Communications Abstracts</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>Technology Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><collection>Aerospace Database</collection><collection>OSTI.GOV</collection><jtitle>IEEE Trans. Electron Devices; (United States)</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Bube, R.H.</au><au>Fahrenbruch, A.L.</au><au>Sinclair, R.</au><au>Anthony, T.C.</au><au>Fortmann, C.</au><au>Huber, W.</au><au>Chun-Teh Lee</au><au>Thorpe, T.</au><au>Yamashita, T.</au><aucorp>Department of Materials Science and Engineering, Stanford Univ., Stanford, CA</aucorp><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Cadmium telluride films and solar cells</atitle><jtitle>IEEE Trans. Electron Devices; (United States)</jtitle><stitle>TED</stitle><date>1984-05-01</date><risdate>1984</risdate><volume>31</volume><issue>5</issue><spage>528</spage><epage>538</epage><pages>528-538</pages><issn>0018-9383</issn><eissn>1557-9646</eissn><coden>IETDAI</coden><abstract>CdTe thin films for solar cell applications have been deposited by close-spaced vapor transport and by hot-wall vacuum evaporation. As-deposited films are p-type with hole densities that increase to values of 1 × 10 16 cm -3 with increasing substrate temperature. A variety of experimental results can be interpreted either in terms of doping by native defects such as cadmium vacancies or doping by diffusion from the graphite substrate, with evidence for self-compensation. Many CdS/CdTe/graphite solar cells have been prepared by vacuum evaporation of CdS onto thin-film CdTe, which have low values of J_{O} \sim 10^{-9} A/cm 2 and high values of J_{SC} \sim 17 mA/cm 2 . The open-circuit voltage is low at 0.48 V for CdS deposition at 300° C, but increases with decreasing CdS deposition temperature. The highest efficiency prepared to date is 6.4 percent. Tile efficiency is limited at present by the fill factor, associated with a total series resistivity in the light of the order of 10 Ω-cm 2 . Supporting research on low-resistance contacts to p-type CdTe, grain boundary properties and passivation in p-type CdTe bicrystals and thin films, and high-resolution transmission electron microscopy of junction interfaces is briefly described.</abstract><cop>United States</cop><pub>IEEE</pub><doi>10.1109/T-ED.1984.21564</doi><tpages>11</tpages></addata></record> |
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| identifier | ISSN: 0018-9383 |
| ispartof | IEEE Trans. Electron Devices; (United States), 1984-05, Vol.31 (5), p.528-538 |
| issn | 0018-9383 1557-9646 |
| language | eng |
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| source | IEEE Electronic Library (IEL) |
| subjects | 140501 - Solar Energy Conversion- Photovoltaic Conversion CADMIUM COMPOUNDS CADMIUM TELLURIDE SOLAR CELLS CADMIUM TELLURIDES CHALCOGENIDES CHEMICAL COATING CHEMICAL VAPOR DEPOSITION CRYSTAL DOPING CURRENT DENSITY DEPOSITION DIRECT ENERGY CONVERTERS EFFICIENCY ELECTRIC CONDUCTIVITY ELECTRIC POTENTIAL ELECTRICAL PROPERTIES FABRICATION MATERIALS P-TYPE CONDUCTORS PHOTOCONDUCTIVITY PHOTOELECTRIC CELLS PHOTOVOLTAIC CELLS PHYSICAL PROPERTIES SEMICONDUCTOR MATERIALS SOLAR CELLS SOLAR ENERGY SOLAR EQUIPMENT SURFACE COATING TELLURIDES TELLURIUM COMPOUNDS TEMPERATURE DEPENDENCE THIN FILMS VACUUM COATING |
| title | Cadmium telluride films and solar cells |
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