A long-wavelength, annular In0.53Ga0.47As p-i-n photodetector
We describe a novel, annular In 0.53 Ga 0.47 As p-in photodiode sensitive to λ = 1.7 µm for use as a fiber tap or front-face laser monitor. The diode has a 150 µm diameter, straight-walled hole through the diode cross-section formed by photochemical etching. The hole is concentric with the 430 µm di...
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| Veröffentlicht in: | IEEE electron device letters 1982-01, Vol.3 (12), p.415-417 |
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| container_end_page | 417 |
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| container_issue | 12 |
| container_start_page | 415 |
| container_title | IEEE electron device letters |
| container_volume | 3 |
| creator | Forrest, S.R. Kohl, P.A. Panock, R. DeWinter, J.C. Nahory, R.E. Yanowski, E. |
| description | We describe a novel, annular In 0.53 Ga 0.47 As p-in photodiode sensitive to λ = 1.7 µm for use as a fiber tap or front-face laser monitor. The diode has a 150 µm diameter, straight-walled hole through the diode cross-section formed by photochemical etching. The hole is concentric with the 430 µm diameter mesa. A dark current of I = 90 nA at 5 V and a breakdown voltage of 33 V indicate that the hole formation process does not result in significant degradation of the device operating characteristics. Measurements of photoresponse as a function of position across the diode surface give further evidence that the hole does not effect overall device performance. |
| doi_str_mv | 10.1109/EDL.1982.25619 |
| format | Article |
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The diode has a 150 µm diameter, straight-walled hole through the diode cross-section formed by photochemical etching. The hole is concentric with the 430 µm diameter mesa. A dark current of I = 90 nA at 5 V and a breakdown voltage of 33 V indicate that the hole formation process does not result in significant degradation of the device operating characteristics. Measurements of photoresponse as a function of position across the diode surface give further evidence that the hole does not effect overall device performance.</description><identifier>ISSN: 0741-3106</identifier><identifier>EISSN: 1558-0563</identifier><identifier>DOI: 10.1109/EDL.1982.25619</identifier><identifier>CODEN: EDLEDZ</identifier><language>eng</language><publisher>IEEE</publisher><subject>Detectors ; Etching ; Fiber lasers ; Gold ; Monitoring ; Optical fiber devices ; Optical sensors ; P-i-n diodes ; Photochemistry ; PIN photodiodes</subject><ispartof>IEEE electron device letters, 1982-01, Vol.3 (12), p.415-417</ispartof><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/1482724$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>314,776,780,792,27901,27902,54733</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/1482724$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc></links><search><creatorcontrib>Forrest, S.R.</creatorcontrib><creatorcontrib>Kohl, P.A.</creatorcontrib><creatorcontrib>Panock, R.</creatorcontrib><creatorcontrib>DeWinter, J.C.</creatorcontrib><creatorcontrib>Nahory, R.E.</creatorcontrib><creatorcontrib>Yanowski, E.</creatorcontrib><title>A long-wavelength, annular In0.53Ga0.47As p-i-n photodetector</title><title>IEEE electron device letters</title><addtitle>LED</addtitle><description>We describe a novel, annular In 0.53 Ga 0.47 As p-in photodiode sensitive to λ = 1.7 µm for use as a fiber tap or front-face laser monitor. The diode has a 150 µm diameter, straight-walled hole through the diode cross-section formed by photochemical etching. The hole is concentric with the 430 µm diameter mesa. A dark current of I = 90 nA at 5 V and a breakdown voltage of 33 V indicate that the hole formation process does not result in significant degradation of the device operating characteristics. Measurements of photoresponse as a function of position across the diode surface give further evidence that the hole does not effect overall device performance.</description><subject>Detectors</subject><subject>Etching</subject><subject>Fiber lasers</subject><subject>Gold</subject><subject>Monitoring</subject><subject>Optical fiber devices</subject><subject>Optical sensors</subject><subject>P-i-n diodes</subject><subject>Photochemistry</subject><subject>PIN photodiodes</subject><issn>0741-3106</issn><issn>1558-0563</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>1982</creationdate><recordtype>article</recordtype><sourceid/><recordid>eNotzD1PwzAQAFALgUQorCws-QE4-Hz-HBiqUkqlSCwwV5fm0gYFJ0oCiH_PUKa3PSFuQRUAKj6sn8oCYtCFtg7imcjA2iCVdXguMuUNSATlLsXVNH0oBcZ4k4nHZd716SB_6Js7Tof5eJ9TSl8djfk2qcLihlRh_HLKB9nKlA_Hfu5rnnk_9-O1uGiom_jm34V4f16_rV5k-brZrpalbMHjLH2MFbqmMsgMusZgTBMqjESkar-vaiSIsQaLVoHzxIGijoDskBofLC7E3eltmXk3jO0njb87MEF7bfAP2yVEfw</recordid><startdate>19820101</startdate><enddate>19820101</enddate><creator>Forrest, S.R.</creator><creator>Kohl, P.A.</creator><creator>Panock, R.</creator><creator>DeWinter, J.C.</creator><creator>Nahory, R.E.</creator><creator>Yanowski, E.</creator><general>IEEE</general><scope/></search><sort><creationdate>19820101</creationdate><title>A long-wavelength, annular In0.53Ga0.47As p-i-n photodetector</title><author>Forrest, S.R. ; Kohl, P.A. ; Panock, R. ; DeWinter, J.C. ; Nahory, R.E. ; Yanowski, E.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-i173t-799b36fb43ee12d3844f8b39aaa0d7cbd3a199d15350167ae8a92913e63af7853</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>1982</creationdate><topic>Detectors</topic><topic>Etching</topic><topic>Fiber lasers</topic><topic>Gold</topic><topic>Monitoring</topic><topic>Optical fiber devices</topic><topic>Optical sensors</topic><topic>P-i-n diodes</topic><topic>Photochemistry</topic><topic>PIN photodiodes</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Forrest, S.R.</creatorcontrib><creatorcontrib>Kohl, P.A.</creatorcontrib><creatorcontrib>Panock, R.</creatorcontrib><creatorcontrib>DeWinter, J.C.</creatorcontrib><creatorcontrib>Nahory, R.E.</creatorcontrib><creatorcontrib>Yanowski, E.</creatorcontrib><jtitle>IEEE electron device letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Forrest, S.R.</au><au>Kohl, P.A.</au><au>Panock, R.</au><au>DeWinter, J.C.</au><au>Nahory, R.E.</au><au>Yanowski, E.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>A long-wavelength, annular In0.53Ga0.47As p-i-n photodetector</atitle><jtitle>IEEE electron device letters</jtitle><stitle>LED</stitle><date>1982-01-01</date><risdate>1982</risdate><volume>3</volume><issue>12</issue><spage>415</spage><epage>417</epage><pages>415-417</pages><issn>0741-3106</issn><eissn>1558-0563</eissn><coden>EDLEDZ</coden><abstract>We describe a novel, annular In 0.53 Ga 0.47 As p-in photodiode sensitive to λ = 1.7 µm for use as a fiber tap or front-face laser monitor. The diode has a 150 µm diameter, straight-walled hole through the diode cross-section formed by photochemical etching. The hole is concentric with the 430 µm diameter mesa. A dark current of I = 90 nA at 5 V and a breakdown voltage of 33 V indicate that the hole formation process does not result in significant degradation of the device operating characteristics. Measurements of photoresponse as a function of position across the diode surface give further evidence that the hole does not effect overall device performance.</abstract><pub>IEEE</pub><doi>10.1109/EDL.1982.25619</doi><tpages>3</tpages></addata></record> |
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| ispartof | IEEE electron device letters, 1982-01, Vol.3 (12), p.415-417 |
| issn | 0741-3106 1558-0563 |
| language | eng |
| recordid | cdi_ieee_primary_1482724 |
| source | IEEE Electronic Library (IEL) |
| subjects | Detectors Etching Fiber lasers Gold Monitoring Optical fiber devices Optical sensors P-i-n diodes Photochemistry PIN photodiodes |
| title | A long-wavelength, annular In0.53Ga0.47As p-i-n photodetector |
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