MoSi2formation by rapid isothermal annealing

Formation of MoSi 2 by rapid isothermal annealing has been investigated using black-body radiation from a graphite heater. Although elemental Mo layers deposited on 3 in diameter silicon wafers failed to form silicides after annealing, excellent results were obtained using co-sputtered Mo and Si on...

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Veröffentlicht in:	IEEE electron device letters 1982-07, Vol.3 (7), p.179-181
Hauptverfasser:	Fulks, R.T., Powell, R.A., Stacy, W.T.
Format:	Artikel
Sprache:	eng
Schlagworte:	Annealing Conductivity Furnaces Isothermal processes Optical films Silicides Silicon Substrates Temperature measurement Very large scale integration
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