Avalanche response time in GaAs as determined from microwave admittance measurements
Microwave admittance measurements in a high power GaAs double-drift Read diode are fitted to an analytical solution to the Read equation. The data can be explained within experimental error by the classical expression for intrinsic avalanche time \tau_{i} = l_{a}/3v_{S} . This is at variance with th...
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| Veröffentlicht in: | IEEE transactions on electron devices 1981-07, Vol.28 (7), p.808-811 |
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| Hauptverfasser: | , , |
| Format: | Artikel |
| Sprache: | eng |
| Online-Zugang: | Volltext bestellen |
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| Zusammenfassung: | Microwave admittance measurements in a high power GaAs double-drift Read diode are fitted to an analytical solution to the Read equation. The data can be explained within experimental error by the classical expression for intrinsic avalanche time \tau_{i} = l_{a}/3v_{S} . This is at variance with the prediction that τ i in GaAs may be anomalously long. |
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| ISSN: | 0018-9383 1557-9646 |
| DOI: | 10.1109/T-ED.1981.20435 |