Insulated-gate planar thyristors: II-Quantitative modeling
The basic modes of operation of a new planar, high-voltage thyristor which is controlled by an insulated gate are described in Part I. This paper presents models for the dc operation of the device. Low-current nonregenerative operation is described by an equivalent circuit containing MOSFET's,...
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| Veröffentlicht in: | IEEE transactions on electron devices 1980-02, Vol.27 (2), p.387-394 |
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| container_end_page | 394 |
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| container_title | IEEE transactions on electron devices |
| container_volume | 27 |
| creator | Scharf, B.W. Plummer, J.D. |
| description | The basic modes of operation of a new planar, high-voltage thyristor which is controlled by an insulated gate are described in Part I. This paper presents models for the dc operation of the device. Low-current nonregenerative operation is described by an equivalent circuit containing MOSFET's, bipolar transistors, and resistors. These are analyzed by a general-purpose nonlinear circuit analysis program. Sophisticated transistor models, both bipolar and MOS, are required to accurately represent the component devices, and their characteristics are discussed. The high-conductivity state is modeled as a one-dimensional p-i-n diode. Determination of appropriate parameters is described and simulations are compared to measured characteristics. The resulting models are suitable for the design of devices with a wide variety of dc characteristics. |
| doi_str_mv | 10.1109/T-ED.1980.19872 |
| format | Article |
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| source | IEEE Electronic Library (IEL) |
| title | Insulated-gate planar thyristors: II-Quantitative modeling |
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