Electron irradiation effects in MOS systems

Flat-band shift measurements were made on p-type MOS devices irradiated with electrons at various gate-bias voltages. A structured reproducible curve of flat-band shift versus gate bias was obtained which could not be readily accounted for with existing models. Experimental data were taken over a wi...

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Veröffentlicht in:	IEEE (Inst. Electr. Electron. Eng.) Trans. Electron Devices., v. ED- 21, no. 12, pp. 768-777 v. ED- 21, no. 12, pp. 768-777, 1974-12, Vol.21 (12), p.768-777
Hauptverfasser:	Churchill, J.N., Collins, T.W., Holmstrom, F.E.
Format:	Artikel
Sprache:	eng
Schlagworte:	BAND THEORY ELECTRICAL PROPERTIES ELECTRONS MATHEMATICAL MODELS MOS TRANSISTORS- PHYSICAL RADIATION EFFECTS N46300 -Instrumentation-Radiation Effects on Instrument Components, Instruments, or Electronic Systems TRAPS
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