Device modeling for MOS devices at low temperatures

An attempt was made to develop a two-dimensional model for solving Poisson's equation over a temperature range of 50-350 K for MOS devices. This required the incorporation of temperature dependencies in Poisson's equation relevant to MOS transistors. To solve the system of nonlinear differ...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	Briglia, F., Ho, F.D.
Format:	Tagungsbericht
Sprache:	eng
Schlagworte:	Linear approximation Linearization techniques MOS devices MOSFETs Newton method Nonlinear equations Poisson equations Relaxation methods Temperature dependence Temperature distribution
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