Calculation of the emitter efficiency of bipolar transistors
The emitter efficiency of a bipolar transistor is calculated taking heavy doping effects such as impurity band formation and band tailing into account. It is shown that in most cases these effects, rather than the minority carrier lifetime in the emitter are limiting the transistor current gain. Thi...
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| Veröffentlicht in: | IEEE transactions on electron devices 1973-09, Vol.20 (9), p.772-778 |
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| container_end_page | 778 |
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| container_issue | 9 |
| container_start_page | 772 |
| container_title | IEEE transactions on electron devices |
| container_volume | 20 |
| creator | Mertens, R.P. DeMan, H.J. Van Overstraeten, R.J. |
| description | The emitter efficiency of a bipolar transistor is calculated taking heavy doping effects such as impurity band formation and band tailing into account. It is shown that in most cases these effects, rather than the minority carrier lifetime in the emitter are limiting the transistor current gain. This allows us to define an effective emitter impurity profile for use in current transport calculations. The influence of the emitter and base impurity profiles upon the gain is studied, and experimental results are presented showing that the knowledge of the impurity profiles is sufficient to predict the one-dimensional current gain. |
| doi_str_mv | 10.1109/T-ED.1973.17745 |
| format | Article |
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It is shown that in most cases these effects, rather than the minority carrier lifetime in the emitter are limiting the transistor current gain. This allows us to define an effective emitter impurity profile for use in current transport calculations. The influence of the emitter and base impurity profiles upon the gain is studied, and experimental results are presented showing that the knowledge of the impurity profiles is sufficient to predict the one-dimensional current gain.</description><identifier>ISSN: 0018-9383</identifier><identifier>EISSN: 1557-9646</identifier><identifier>DOI: 10.1109/T-ED.1973.17745</identifier><identifier>CODEN: IETDAI</identifier><language>eng</language><publisher>IEEE</publisher><ispartof>IEEE transactions on electron devices, 1973-09, Vol.20 (9), p.772-778</ispartof><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c352t-33d80c379a5737d86ebc6efe8fa4f9fd06fb042ae0d16f727a2db10d5150f7f73</citedby></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/1477402$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>314,780,784,796,27922,27923,54756</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/1477402$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc></links><search><creatorcontrib>Mertens, R.P.</creatorcontrib><creatorcontrib>DeMan, H.J.</creatorcontrib><creatorcontrib>Van Overstraeten, R.J.</creatorcontrib><title>Calculation of the emitter efficiency of bipolar transistors</title><title>IEEE transactions on electron devices</title><addtitle>TED</addtitle><description>The emitter efficiency of a bipolar transistor is calculated taking heavy doping effects such as impurity band formation and band tailing into account. It is shown that in most cases these effects, rather than the minority carrier lifetime in the emitter are limiting the transistor current gain. This allows us to define an effective emitter impurity profile for use in current transport calculations. The influence of the emitter and base impurity profiles upon the gain is studied, and experimental results are presented showing that the knowledge of the impurity profiles is sufficient to predict the one-dimensional current gain.</description><issn>0018-9383</issn><issn>1557-9646</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>1973</creationdate><recordtype>article</recordtype><recordid>eNqNkDtPwzAUhS0EEqUwM7BkYkvr90NiQaU8pEosZbYc51oYpUmx3aH_npQiMcJ0dXS-c4cPoWuCZ4RgM1_Xy4cZMYrNiFJcnKAJEULVRnJ5iiYYE10bptk5usj5Y4ySczpBdwvX-V3nShz6aghVeYcKNrEUSBWEEH2E3u8PTRO3Q-dSVZLrc8xlSPkSnQXXZbj6uVP09rhcL57r1evTy-J-VXsmaKkZazX2TBknFFOtltB4CQF0cDyY0GIZGsypA9wSGRRVjrYNwa0gAgcVFJui2-PfbRo-d5CL3cTsoetcD8MuW6o1Y5TSf4B0lMPE3yDRShuqR3B-BH0ack4Q7DbFjUt7S7A9eLdru3ywB-_22_u4uDkuIgD80nwsMWVfg4l-iA</recordid><startdate>19730901</startdate><enddate>19730901</enddate><creator>Mertens, R.P.</creator><creator>DeMan, H.J.</creator><creator>Van Overstraeten, R.J.</creator><general>IEEE</general><scope>AAYXX</scope><scope>CITATION</scope><scope>8FD</scope><scope>H8D</scope><scope>L7M</scope><scope>7SP</scope><scope>7U5</scope></search><sort><creationdate>19730901</creationdate><title>Calculation of the emitter efficiency of bipolar transistors</title><author>Mertens, R.P. ; DeMan, H.J. ; Van Overstraeten, R.J.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c352t-33d80c379a5737d86ebc6efe8fa4f9fd06fb042ae0d16f727a2db10d5150f7f73</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>1973</creationdate><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Mertens, R.P.</creatorcontrib><creatorcontrib>DeMan, H.J.</creatorcontrib><creatorcontrib>Van Overstraeten, R.J.</creatorcontrib><collection>CrossRef</collection><collection>Technology Research Database</collection><collection>Aerospace Database</collection><collection>Advanced Technologies Database with Aerospace</collection><collection>Electronics & Communications Abstracts</collection><collection>Solid State and Superconductivity Abstracts</collection><jtitle>IEEE transactions on electron devices</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Mertens, R.P.</au><au>DeMan, H.J.</au><au>Van Overstraeten, R.J.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Calculation of the emitter efficiency of bipolar transistors</atitle><jtitle>IEEE transactions on electron devices</jtitle><stitle>TED</stitle><date>1973-09-01</date><risdate>1973</risdate><volume>20</volume><issue>9</issue><spage>772</spage><epage>778</epage><pages>772-778</pages><issn>0018-9383</issn><eissn>1557-9646</eissn><coden>IETDAI</coden><abstract>The emitter efficiency of a bipolar transistor is calculated taking heavy doping effects such as impurity band formation and band tailing into account. It is shown that in most cases these effects, rather than the minority carrier lifetime in the emitter are limiting the transistor current gain. This allows us to define an effective emitter impurity profile for use in current transport calculations. The influence of the emitter and base impurity profiles upon the gain is studied, and experimental results are presented showing that the knowledge of the impurity profiles is sufficient to predict the one-dimensional current gain.</abstract><pub>IEEE</pub><doi>10.1109/T-ED.1973.17745</doi><tpages>7</tpages></addata></record> |
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| ispartof | IEEE transactions on electron devices, 1973-09, Vol.20 (9), p.772-778 |
| issn | 0018-9383 1557-9646 |
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| source | IEEE Electronic Library (IEL) |
| title | Calculation of the emitter efficiency of bipolar transistors |
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