A stable bulk GaAs amplifier without N0×L (doping-times-sample length) limitation

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Veröffentlicht in:	IEEE transactions on electron devices 1968-09, Vol.15 (9), p.690-690
1. Verfasser:	Thim, H.W.
Format:	Artikel
Sprache:	eng
Schlagworte:	Conductivity Electrons Frequency measurement Gallium arsenide Laboratories Semiconductor device measurement Semiconductor lasers
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container_title	IEEE transactions on electron devices
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doi_str_mv	10.1109/T-ED.1968.16472
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ispartof	IEEE transactions on electron devices, 1968-09, Vol.15 (9), p.690-690
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source	IEEE Electronic Library (IEL)
subjects	Conductivity Electrons Frequency measurement Gallium arsenide Laboratories Semiconductor device measurement Semiconductor lasers
title	A stable bulk GaAs amplifier without N0×L (doping-times-sample length) limitation
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