Mode interactions in semiconductor lasers
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Veröffentlicht in: | IEEE transactions on electron devices 1964-11, Vol.11 (11), p.536-536 |
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container_end_page | 536 |
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container_issue | 11 |
container_start_page | 536 |
container_title | IEEE transactions on electron devices |
container_volume | 11 |
creator | Statz, H. Tang, C.L. Lavine, J.M. |
description | |
doi_str_mv | 10.1109/T-ED.1964.15430 |
format | Article |
fullrecord | <record><control><sourceid>proquest_RIE</sourceid><recordid>TN_cdi_ieee_primary_1473818</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><ieee_id>1473818</ieee_id><sourcerecordid>28966770</sourcerecordid><originalsourceid>FETCH-LOGICAL-c192t-b974b399ac9cf0bec8e2bb2b4da8c007f9329b92cd07eb2f979f17ece232cc333</originalsourceid><addsrcrecordid>eNqNkDtPwzAUhS0EEqUwM7B0QmJI61dj3xG15SEVsZTZsm9upKA0LnY68O9JWyRWpqtz9Z0zfIzdCj4VgsNsU6yWUwGlnoq5VvyMjcR8borhUZ6zEefCFqCsumRXOX8OsdRajtjDW6xo0nQ9JY99E7s8hEmmbYOxq_bYxzRpfaaUr9lF7dtMN793zD6eVpvFS7F-f35dPK4LFCD7IoDRQQF4BKx5ILQkQ5BBV94i56YGJSGAxIobCrIGA7UwhCSVRFRKjdn9aXeX4teecu-2TUZqW99R3GcnLZSlMfwfoNIctBzA2QnEFHNOVLtdarY-fTvB3cGd27jV0h3cuaO7oXF3ajRE9Edro6yw6geKcGpz</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>28340942</pqid></control><display><type>article</type><title>Mode interactions in semiconductor lasers</title><source>IEEE Electronic Library (IEL)</source><creator>Statz, H. ; Tang, C.L. ; Lavine, J.M.</creator><creatorcontrib>Statz, H. ; Tang, C.L. ; Lavine, J.M.</creatorcontrib><identifier>ISSN: 0018-9383</identifier><identifier>EISSN: 1557-9646</identifier><identifier>DOI: 10.1109/T-ED.1964.15430</identifier><identifier>CODEN: IETDAI</identifier><language>eng</language><publisher>IEEE</publisher><ispartof>IEEE transactions on electron devices, 1964-11, Vol.11 (11), p.536-536</ispartof><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/1473818$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>314,780,784,796,27922,27923,54756</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/1473818$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc></links><search><creatorcontrib>Statz, H.</creatorcontrib><creatorcontrib>Tang, C.L.</creatorcontrib><creatorcontrib>Lavine, J.M.</creatorcontrib><title>Mode interactions in semiconductor lasers</title><title>IEEE transactions on electron devices</title><addtitle>TED</addtitle><issn>0018-9383</issn><issn>1557-9646</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>1964</creationdate><recordtype>article</recordtype><recordid>eNqNkDtPwzAUhS0EEqUwM7B0QmJI61dj3xG15SEVsZTZsm9upKA0LnY68O9JWyRWpqtz9Z0zfIzdCj4VgsNsU6yWUwGlnoq5VvyMjcR8borhUZ6zEefCFqCsumRXOX8OsdRajtjDW6xo0nQ9JY99E7s8hEmmbYOxq_bYxzRpfaaUr9lF7dtMN793zD6eVpvFS7F-f35dPK4LFCD7IoDRQQF4BKx5ILQkQ5BBV94i56YGJSGAxIobCrIGA7UwhCSVRFRKjdn9aXeX4teecu-2TUZqW99R3GcnLZSlMfwfoNIctBzA2QnEFHNOVLtdarY-fTvB3cGd27jV0h3cuaO7oXF3ajRE9Edro6yw6geKcGpz</recordid><startdate>19641101</startdate><enddate>19641101</enddate><creator>Statz, H.</creator><creator>Tang, C.L.</creator><creator>Lavine, J.M.</creator><general>IEEE</general><scope>AAYXX</scope><scope>CITATION</scope><scope>7SP</scope><scope>8FD</scope><scope>L7M</scope><scope>7U5</scope></search><sort><creationdate>19641101</creationdate><title>Mode interactions in semiconductor lasers</title><author>Statz, H. ; Tang, C.L. ; Lavine, J.M.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c192t-b974b399ac9cf0bec8e2bb2b4da8c007f9329b92cd07eb2f979f17ece232cc333</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>1964</creationdate><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Statz, H.</creatorcontrib><creatorcontrib>Tang, C.L.</creatorcontrib><creatorcontrib>Lavine, J.M.</creatorcontrib><collection>CrossRef</collection><collection>Electronics & Communications Abstracts</collection><collection>Technology Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><collection>Solid State and Superconductivity Abstracts</collection><jtitle>IEEE transactions on electron devices</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Statz, H.</au><au>Tang, C.L.</au><au>Lavine, J.M.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Mode interactions in semiconductor lasers</atitle><jtitle>IEEE transactions on electron devices</jtitle><stitle>TED</stitle><date>1964-11-01</date><risdate>1964</risdate><volume>11</volume><issue>11</issue><spage>536</spage><epage>536</epage><pages>536-536</pages><issn>0018-9383</issn><eissn>1557-9646</eissn><coden>IETDAI</coden><pub>IEEE</pub><doi>10.1109/T-ED.1964.15430</doi><tpages>1</tpages></addata></record> |
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issn | 0018-9383 1557-9646 |
language | eng |
recordid | cdi_ieee_primary_1473818 |
source | IEEE Electronic Library (IEL) |
title | Mode interactions in semiconductor lasers |
url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-13T18%3A24%3A05IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest_RIE&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Mode%20interactions%20in%20semiconductor%20lasers&rft.jtitle=IEEE%20transactions%20on%20electron%20devices&rft.au=Statz,%20H.&rft.date=1964-11-01&rft.volume=11&rft.issue=11&rft.spage=536&rft.epage=536&rft.pages=536-536&rft.issn=0018-9383&rft.eissn=1557-9646&rft.coden=IETDAI&rft_id=info:doi/10.1109/T-ED.1964.15430&rft_dat=%3Cproquest_RIE%3E28966770%3C/proquest_RIE%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_pqid=28340942&rft_id=info:pmid/&rft_ieee_id=1473818&rfr_iscdi=true |