Enhancement-mode pseudomorphic inverted HEMT for low noise amplifier
The noise characteristics of pseudomorphic inverted high electron mobility transistors (P-I-HEMTs) are reported. The P-I-HEMTs were fabricated in enhancement-mode. Compared with the pseudomorphic HEMT, the P-I-HEMT shows a lower noise figure, especially at small drain voltage and small drain current...
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| creator | Ohmuro, K. Fujishiro, H.I. Itoh, M. Nakamura, H. Nishi, S. |
| description | The noise characteristics of pseudomorphic inverted high electron mobility transistors (P-I-HEMTs) are reported. The P-I-HEMTs were fabricated in enhancement-mode. Compared with the pseudomorphic HEMT, the P-I-HEMT shows a lower noise figure, especially at small drain voltage and small drain current. It is concluded that the P-I-HEMT structure is suitable for fine gate low-noise FETs.< > |
| doi_str_mv | 10.1109/MWSYM.1991.147102 |
| format | Conference Proceeding |
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The P-I-HEMTs were fabricated in enhancement-mode. Compared with the pseudomorphic HEMT, the P-I-HEMT shows a lower noise figure, especially at small drain voltage and small drain current. It is concluded that the P-I-HEMT structure is suitable for fine gate low-noise FETs.< ></description><identifier>ISSN: 0149-645X</identifier><identifier>ISBN: 9780879425913</identifier><identifier>ISBN: 0879425911</identifier><identifier>EISSN: 2576-7216</identifier><identifier>DOI: 10.1109/MWSYM.1991.147102</identifier><language>eng</language><publisher>IEEE</publisher><subject>Carrier confinement ; Dry etching ; Electrodes ; FETs ; HEMTs ; Low-noise amplifiers ; PHEMTs ; Semiconductor device noise ; Voltage ; Wet etching</subject><ispartof>1991 IEEE MTT-S International Microwave Symposium Digest, 1991, p.709-712 vol.2</ispartof><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/147102$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>310,311,781,785,790,791,2059,4051,4052,27930,54925</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/147102$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc></links><search><creatorcontrib>Ohmuro, K.</creatorcontrib><creatorcontrib>Fujishiro, H.I.</creatorcontrib><creatorcontrib>Itoh, M.</creatorcontrib><creatorcontrib>Nakamura, H.</creatorcontrib><creatorcontrib>Nishi, S.</creatorcontrib><title>Enhancement-mode pseudomorphic inverted HEMT for low noise amplifier</title><title>1991 IEEE MTT-S International Microwave Symposium Digest</title><addtitle>MWSYM</addtitle><description>The noise characteristics of pseudomorphic inverted high electron mobility transistors (P-I-HEMTs) are reported. The P-I-HEMTs were fabricated in enhancement-mode. Compared with the pseudomorphic HEMT, the P-I-HEMT shows a lower noise figure, especially at small drain voltage and small drain current. It is concluded that the P-I-HEMT structure is suitable for fine gate low-noise FETs.< ></description><subject>Carrier confinement</subject><subject>Dry etching</subject><subject>Electrodes</subject><subject>FETs</subject><subject>HEMTs</subject><subject>Low-noise amplifiers</subject><subject>PHEMTs</subject><subject>Semiconductor device noise</subject><subject>Voltage</subject><subject>Wet etching</subject><issn>0149-645X</issn><issn>2576-7216</issn><isbn>9780879425913</isbn><isbn>0879425911</isbn><fulltext>true</fulltext><rsrctype>conference_proceeding</rsrctype><creationdate>1991</creationdate><recordtype>conference_proceeding</recordtype><sourceid>6IE</sourceid><sourceid>RIE</sourceid><recordid>eNotkMtOg0AUQCc-EknlA3Q1P0C9l5nhMktTsTUpcSGJumoGuKRjeAVQ499rUs_m7M7iCHGDsEYEe5e_vrzna7QW16gJIT4TQWwoiSjG5FyEllJIyerYWFQXIgDUNkq0ebsS4Tx_wB_agCUTiIesP7q-4o77JeqGmuU482c9dMM0Hn0lff_F08K13GV5IZthku3wLfvBzyxdN7a-8Txdi8vGtTOH_16J4jErNrto_7x92tzvI5_SEjHHVcpEJWkq0YGDChogqA1brhKnSKPTypgENVPp0GJCpMoGFMTONGolbk9Zz8yHcfKdm34OpwPqF_LaTUU</recordid><startdate>1991</startdate><enddate>1991</enddate><creator>Ohmuro, K.</creator><creator>Fujishiro, H.I.</creator><creator>Itoh, M.</creator><creator>Nakamura, H.</creator><creator>Nishi, S.</creator><general>IEEE</general><scope>6IE</scope><scope>6IL</scope><scope>CBEJK</scope><scope>RIE</scope><scope>RIL</scope></search><sort><creationdate>1991</creationdate><title>Enhancement-mode pseudomorphic inverted HEMT for low noise amplifier</title><author>Ohmuro, K. ; Fujishiro, H.I. ; Itoh, M. ; Nakamura, H. ; Nishi, S.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-i87t-ee2c8e77b747b1a0a0c0f070d5e9ec6a3741a4355614e7ba1916773bf0302a5f3</frbrgroupid><rsrctype>conference_proceedings</rsrctype><prefilter>conference_proceedings</prefilter><language>eng</language><creationdate>1991</creationdate><topic>Carrier confinement</topic><topic>Dry etching</topic><topic>Electrodes</topic><topic>FETs</topic><topic>HEMTs</topic><topic>Low-noise amplifiers</topic><topic>PHEMTs</topic><topic>Semiconductor device noise</topic><topic>Voltage</topic><topic>Wet etching</topic><toplevel>online_resources</toplevel><creatorcontrib>Ohmuro, K.</creatorcontrib><creatorcontrib>Fujishiro, H.I.</creatorcontrib><creatorcontrib>Itoh, M.</creatorcontrib><creatorcontrib>Nakamura, H.</creatorcontrib><creatorcontrib>Nishi, S.</creatorcontrib><collection>IEEE Electronic Library (IEL) Conference Proceedings</collection><collection>IEEE Proceedings Order Plan All Online (POP All Online) 1998-present by volume</collection><collection>IEEE Xplore All Conference Proceedings</collection><collection>IEEE Electronic Library (IEL)</collection><collection>IEEE Proceedings Order Plans (POP All) 1998-Present</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Ohmuro, K.</au><au>Fujishiro, H.I.</au><au>Itoh, M.</au><au>Nakamura, H.</au><au>Nishi, S.</au><format>book</format><genre>proceeding</genre><ristype>CONF</ristype><atitle>Enhancement-mode pseudomorphic inverted HEMT for low noise amplifier</atitle><btitle>1991 IEEE MTT-S International Microwave Symposium Digest</btitle><stitle>MWSYM</stitle><date>1991</date><risdate>1991</risdate><spage>709</spage><epage>712 vol.2</epage><pages>709-712 vol.2</pages><issn>0149-645X</issn><eissn>2576-7216</eissn><isbn>9780879425913</isbn><isbn>0879425911</isbn><abstract>The noise characteristics of pseudomorphic inverted high electron mobility transistors (P-I-HEMTs) are reported. The P-I-HEMTs were fabricated in enhancement-mode. Compared with the pseudomorphic HEMT, the P-I-HEMT shows a lower noise figure, especially at small drain voltage and small drain current. It is concluded that the P-I-HEMT structure is suitable for fine gate low-noise FETs.< ></abstract><pub>IEEE</pub><doi>10.1109/MWSYM.1991.147102</doi></addata></record> |
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| identifier | ISSN: 0149-645X |
| ispartof | 1991 IEEE MTT-S International Microwave Symposium Digest, 1991, p.709-712 vol.2 |
| issn | 0149-645X 2576-7216 |
| language | eng |
| recordid | cdi_ieee_primary_147102 |
| source | IEEE Electronic Library (IEL) Conference Proceedings |
| subjects | Carrier confinement Dry etching Electrodes FETs HEMTs Low-noise amplifiers PHEMTs Semiconductor device noise Voltage Wet etching |
| title | Enhancement-mode pseudomorphic inverted HEMT for low noise amplifier |
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