A run-to-run film thickness control of chemical-mechanical planarization processes
With the continuing shrink of device geometries, tightly control of semiconductor manufacturing processes becomes a critical factor to improve the process performance, throughput and yield. In this paper, we present design, analysis and implementation of a run-to-run film thickness control scheme fo...
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| creator | Jingang Yi Wei-Shu Sang Zhao, E. |
| description | With the continuing shrink of device geometries, tightly control of semiconductor manufacturing processes becomes a critical factor to improve the process performance, throughput and yield. In this paper, we present design, analysis and implementation of a run-to-run film thickness control scheme for chemical-mechanical planarization (CMP) processes. A predictor-corrector type of control law is utilized to regulate the CMP process time. The control algorithm uses the information of the monitor wafer removal rate and the consumable lifetime to compensate for process drifts and shifts. We also discuss a compensation method for CMP polisher head-to-head variations. The process results in a production fab show a significant improvement of CMP performance under the proposed control scheme. |
| doi_str_mv | 10.1109/ACC.2005.1470643 |
| format | Conference Proceeding |
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| fulltext | fulltext_linktorsrc |
| identifier | ISSN: 0743-1619 |
| ispartof | 2005 American Control Conference, 2005, p.4231-4236 vol. 6 |
| issn | 0743-1619 2378-5861 |
| language | eng |
| recordid | cdi_ieee_primary_1470643 |
| source | IEEE Electronic Library (IEL) Conference Proceedings |
| subjects | Chemical analysis Chemical processes Geometry Manufacturing processes Monitoring Planarization Production Semiconductor films Thickness control Throughput |
| title | A run-to-run film thickness control of chemical-mechanical planarization processes |
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