90nm toggle MRAM array with 0.29/spl mu/m/sup 2/ cells

A 90nm magnetoresistive random access memory (MRAM) based on the toggle switching mode has been successfully demonstrated for the first time in a 90nm CMOS process. The MRAM memory cell is based on a 1-transistor 1-magnetic tunnel junction (1T1MTJ) with 0.29/spl mu/m/sup 2/bit cell. The results of t...

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Bibliographische Detailangaben

Hauptverfasser:	Durlam, M., Andre, T., Brown, P., Calder, J., Chan, J., Cuppens, R., Dave, R.W., Ditewig, T., DeHerrera, M., Engel, B.N., Feil, B., Frey, C., Galpin, D., Garni, B., Grynkewich, G., Janesky, J., Kerszykowski, G., Lien, M., Martin, J., Nahas, J., Nagel, K., Smith, K., Subramanian, C., Sun, J.J., Tamim, J., Williams, R., Wise, L., Zoll, S., List, F., Fournel, R., Martino, B., Tehrani, S.
Format:	Tagungsbericht
Sprache:	eng
Schlagworte:	Circuits CMOS process CMOS technology Magnetic materials Magnetic separation Magnetic switching Magnetic tunneling Read-write memory Sun Switches
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