Highly scalable 90nm STI bounded twin flash cell with local interconnect

A 90nm Twin Flash memory cell with a size of 0.029/spl mu/m/sup 2//bit (3.5F/sup 2/) is presented. This cell is introduced first in a 1.8V, 2Gbit data flash. The Twin Flash technology is based on a shallow trench isolation (STI) bounded cell with local interconnect (LI) and serves for both advanced...

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Bibliographische Detailangaben

Hauptverfasser:	Nagel, N., Olligs, D., Polei, V., Parascandola, S., Boubekeur, H., Bach, L., Muller, T., Strassburg, M., Riedel, S., Kratzert, P., Caspary, D., Deppe, J., Wilier, J., Schulze, N., Mikolajick, T., Kusters, K.-H., Shappir, A., Redmard, E., Bloom, I., Eitan, B.
Format:	Tagungsbericht
Sprache:	eng
Schlagworte:	Charge carrier processes Electron traps Flash memory cells Hot carriers Isolation technology Random access memory Scalability Silicon compounds Space technology Transistors
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