HfSiON gate dielectrics design for mixed signal CMOS

HfSiON is one of the most promising alternative gate dielectric materials for low standby power (LSTP) application. Recently, DC performance, gate leakage current, and reliability have been reported by T. Watanabe et al in 2004. However, study of analog performances of CMOS with HfSiON gate dielectr...

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Bibliographische Detailangaben

Hauptverfasser:	Kojima, K., Iijima, R., Ohguro, T., Watanabe, T., Takayanagi, M., Momose, H.S., Tshimaru, K., Ishiuchi, H.
Format:	Tagungsbericht
Sprache:	eng
Schlagworte:	Degradation Dielectrics Electrodes Fluctuations Hafnium Leakage current MOS devices MOSFETs Semiconductor device noise Signal design
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