Application of breakthrough failure analysis techniques on 90nm devices with an EOS fail

In this investigation, a combination of old and new FA techniques has been utilized in the analysis of EOS failure in 90nm devices. We illustrate how information from conventional techniques and new innovative techniques can lead to successful root cause analysis of the failure mechanism. One of the...

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Bibliographische Detailangaben
Hauptverfasser: Bailon, M.F., Salinas, P.F., Arboleda, J.S., Miranda, J.C.
Format: Tagungsbericht
Sprache:eng
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