The fast neutron response of silicon carbide semiconductor radiation detectors

The fast neutron response of silicon carbide semiconductor radiation detectors

Fast neutron response measurements are reported for radiation detectors based on large-volume SiC p-i-n diodes. Multiple reaction peaks are observed for 14-MeV neutron reactions with the silicon and carbon nuclides in the SiC detector. A high degree of linearity is observed for the /sup 28/Si(n,/spl...

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Hauptverfasser: Ruddy, F.H., Dulloo, A.R., Seidel, J.G., Das, M.K., Ryu, S.-H., Agarwal, A.K.
Format: Tagungsbericht
Sprache:eng
Schlagworte:
Gamma ray detection
Gamma ray detectors
Neutrons
Radiation detectors
Schottky diodes
Semiconductor radiation detectors
Silicon carbide
Silicon radiation detectors
Spectroscopy
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Zusammenfassung:Fast neutron response measurements are reported for radiation detectors based on large-volume SiC p-i-n diodes. Multiple reaction peaks are observed for 14-MeV neutron reactions with the silicon and carbon nuclides in the SiC detector. A high degree of linearity is observed for the /sup 28/Si(n,/spl alpha//sub 1/) reaction set of six energy levels in the product /sup 25/Mg nucleus, and pulse height defect differences between the observed /sup 12/C(n,/spl alpha//sub 0/) and /sup 28/Si(n,/spl alpha//sub 1/) energy responses are discussed. Energy spectrometry applications in fission and fusion neutron fields are also discussed.
ISSN:1082-3654
2577-0829
DOI:10.1109/NSSMIC.2004.1466901