Bias dependence of buried oxide hardness during total dose irradiation

Direct correlation is reported between single-transistor back channel leakage and the anomalous increase in 16 K-SRAM standby current after total dose irradiation. 16 K-SRAMs fabricated on SIMOX (separation by implantation of oxygen) substrates were total-dose tested up to 10 Mrad (SiO/sub 2/) using...

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Bibliographische Detailangaben

Hauptverfasser:	Yue, C.S., Kueng, J., Fechner, P., Randazzo, T.
Format:	Tagungsbericht
Sprache:	eng
Schlagworte:	CMOS process CMOS technology Current measurement Implants Leakage current MOS devices MOSFETs Random access memory Solid state circuits Threshold voltage
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