Novel diffusion effects in a dielectrically isolated BIMOS process using SOI substrates

The implementaton is discussed of a bulk BIMOS process which incorporates vertical bipolar devices on a thick (5 mu m) film silicon-on-insulator (SOI) substrate. When trench isolation is incorporated in such a process, fully dielectrically isolated devices can be fabricated. By appropriate applicati...

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Bibliographische Detailangaben

Hauptverfasser:	Yallup, K., Lane, B., Edwwards, S.
Format:	Tagungsbericht
Sprache:	eng
Schlagworte:	CMOS process Dielectric devices Dielectric substrates Inductors Isolation technology MOS devices Silicon Temperature
Online-Zugang:	Volltext bestellen
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