Verification of layout efficient shield-based de-embedding techniques for on-wafer HBT characterisation up to 30 GHz

On-wafer measurements play a vital role in device characterization and modelling for advanced high speed devices such as SiGe HBTs and submicron MOSFETs. Unfortunately, due to the lossy nature of Si substrates, extensive, area hungry, de-embedding structures are necessary to separate the intrinsic d...

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Bibliographische Detailangaben

Hauptverfasser:	O'Sullivan, J.A., McCarthy, K.G., Murphy, A.C., Murphy, P.J.
Format:	Tagungsbericht
Sprache:	eng
Schlagworte:	BiCMOS integrated circuits Educational institutions Electric variables measurement Fixtures Heterojunction bipolar transistors Impedance Probes Silicon Substrates Testing
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