Characterization of silicon metallization systems using energetic ion backscattering

Silicon metallization systems have become increasingly sophisticated in order to tailor contact properties such as adhesion, electrical conductivity, barrier height, and long-term reliability. These contact properties are highly susceptible to solid-solid reactions, typically involving atom migratio...

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Veröffentlicht in:Proc. IEEE (Inst. Electr. Electron. Eng.)., v. 62, no. 9, pp. 1224- 1231 v. 62, no. 9, pp. 1224- 1231, 1974-01, Vol.62 (9), p.1224-1231
Hauptverfasser: Borders, J.A., Picraux, S.T.
Format: Artikel
Sprache:eng
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