Power flow and carrier-wave interactions in semiconductors
Small-signal traveling-wave amplification and Gunn effect in semiconductors are discussed from the power flow point of view. Both phenomena give rise to instabilities that are of resistive character in the sense that they depend essentially on finite relaxation time. The known conditions for traveli...
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| Veröffentlicht in: | Proceedings of the IEEE 1973-01, Vol.61 (9), p.1368-1369 |
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| container_end_page | 1369 |
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| container_issue | 9 |
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| container_title | Proceedings of the IEEE |
| container_volume | 61 |
| creator | Freire, G.F. |
| description | Small-signal traveling-wave amplification and Gunn effect in semiconductors are discussed from the power flow point of view. Both phenomena give rise to instabilities that are of resistive character in the sense that they depend essentially on finite relaxation time. The known conditions for traveling-wave amplification--carrier drift velocity larger than the phase velocity--and for the Gunn effect --negative differential mobility--are verified when there is a negative loss in the semiconducting medium. |
| doi_str_mv | 10.1109/PROC.1973.9282 |
| format | Article |
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The known conditions for traveling-wave amplification--carrier drift velocity larger than the phase velocity--and for the Gunn effect --negative differential mobility--are verified when there is a negative loss in the semiconducting medium.</description><identifier>ISSN: 0018-9219</identifier><identifier>EISSN: 1558-2256</identifier><identifier>DOI: 10.1109/PROC.1973.9282</identifier><identifier>CODEN: IEEPAD</identifier><language>eng</language><publisher>IEEE</publisher><subject>Cyclotrons ; Electric fields ; Electron mobility ; Equations ; Frequency ; Load flow ; Magnetic fields ; Nitrogen ; Plasma waves ; Semiconductor materials</subject><ispartof>Proceedings of the IEEE, 1973-01, Vol.61 (9), p.1368-1369</ispartof><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c257t-c8da4a61be01a3488daa035a1b25e7c45220500aad63386d5af20fff61e1d0da3</citedby></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/1451212$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>314,780,784,796,27924,27925,54758</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/1451212$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc></links><search><creatorcontrib>Freire, G.F.</creatorcontrib><title>Power flow and carrier-wave interactions in semiconductors</title><title>Proceedings of the IEEE</title><addtitle>JPROC</addtitle><description>Small-signal traveling-wave amplification and Gunn effect in semiconductors are discussed from the power flow point of view. 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The known conditions for traveling-wave amplification--carrier drift velocity larger than the phase velocity--and for the Gunn effect --negative differential mobility--are verified when there is a negative loss in the semiconducting medium.</description><subject>Cyclotrons</subject><subject>Electric fields</subject><subject>Electron mobility</subject><subject>Equations</subject><subject>Frequency</subject><subject>Load flow</subject><subject>Magnetic fields</subject><subject>Nitrogen</subject><subject>Plasma waves</subject><subject>Semiconductor materials</subject><issn>0018-9219</issn><issn>1558-2256</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>1973</creationdate><recordtype>article</recordtype><recordid>eNpFj0tLxDAUhYMoWEe3btz0D7TemzRt6k6KLxiYQXRd7iQ3UJlpJakW_70tI7g6HDgPPiGuEXJEqG-3r5smx7pSeS2NPBEJam0yKXV5KhIANFktsT4XFzF-AIDSpUrE3XaYOKR-P0wp9S61FELHIZvom9OuHzmQHbuhj7NJIx86O_Tuy45DiJfizNM-8tWfrsT748Nb85ytN08vzf06s1JXY2aNo4JK3DEgqcLMluZzwp3UXNlCSwkagMiVSpnSafISvPclMjpwpFYiP-7aMMQY2LefoTtQ-GkR2oW8XcjbhbxdyOfCzbHQMfN_uNAoUapf2VdVVQ</recordid><startdate>19730101</startdate><enddate>19730101</enddate><creator>Freire, G.F.</creator><general>IEEE</general><scope>AAYXX</scope><scope>CITATION</scope></search><sort><creationdate>19730101</creationdate><title>Power flow and carrier-wave interactions in semiconductors</title><author>Freire, G.F.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c257t-c8da4a61be01a3488daa035a1b25e7c45220500aad63386d5af20fff61e1d0da3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>1973</creationdate><topic>Cyclotrons</topic><topic>Electric fields</topic><topic>Electron mobility</topic><topic>Equations</topic><topic>Frequency</topic><topic>Load flow</topic><topic>Magnetic fields</topic><topic>Nitrogen</topic><topic>Plasma waves</topic><topic>Semiconductor materials</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Freire, G.F.</creatorcontrib><collection>CrossRef</collection><jtitle>Proceedings of the IEEE</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Freire, G.F.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Power flow and carrier-wave interactions in semiconductors</atitle><jtitle>Proceedings of the IEEE</jtitle><stitle>JPROC</stitle><date>1973-01-01</date><risdate>1973</risdate><volume>61</volume><issue>9</issue><spage>1368</spage><epage>1369</epage><pages>1368-1369</pages><issn>0018-9219</issn><eissn>1558-2256</eissn><coden>IEEPAD</coden><abstract>Small-signal traveling-wave amplification and Gunn effect in semiconductors are discussed from the power flow point of view. Both phenomena give rise to instabilities that are of resistive character in the sense that they depend essentially on finite relaxation time. The known conditions for traveling-wave amplification--carrier drift velocity larger than the phase velocity--and for the Gunn effect --negative differential mobility--are verified when there is a negative loss in the semiconducting medium.</abstract><pub>IEEE</pub><doi>10.1109/PROC.1973.9282</doi><tpages>2</tpages></addata></record> |
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| ispartof | Proceedings of the IEEE, 1973-01, Vol.61 (9), p.1368-1369 |
| issn | 0018-9219 1558-2256 |
| language | eng |
| recordid | cdi_ieee_primary_1451212 |
| source | IEEE Electronic Library (IEL) |
| subjects | Cyclotrons Electric fields Electron mobility Equations Frequency Load flow Magnetic fields Nitrogen Plasma waves Semiconductor materials |
| title | Power flow and carrier-wave interactions in semiconductors |
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